%0 Conference Paper %1 conf/iscas/AbunahlaMJA17 %A Abunahla, Heba %A Mohammad, Baker %A Jaoude, Maguy Abi %A Al-Qutayri, Mahmoud %B ISCAS %D 2017 %I IEEE %K dblp %P 1-4 %T Novel hafnium oxide memristor device: Switching behaviour and size effect. %U http://dblp.uni-trier.de/db/conf/iscas/iscas2017.html#AbunahlaMJA17 %@ 978-1-4673-6853-7

@inproceedings{conf/iscas/AbunahlaMJA17, added-at = {2018-11-02T00:00:00.000+0100}, author = {Abunahla, Heba and Mohammad, Baker and Jaoude, Maguy Abi and Al-Qutayri, Mahmoud}, biburl = {https://www.bibsonomy.org/bibtex/266b322a4bc93fdb5aad7e5ebacea5228/dblp}, booktitle = {ISCAS}, crossref = {conf/iscas/2017}, ee = {https://doi.org/10.1109/ISCAS.2017.8050791}, interhash = {8747f13846a3a38cd17021b7f76c6a12}, intrahash = {66b322a4bc93fdb5aad7e5ebacea5228}, isbn = {978-1-4673-6853-7}, keywords = {dblp}, pages = {1-4}, publisher = {IEEE}, timestamp = {2018-11-03T15:20:41.000+0100}, title = {Novel hafnium oxide memristor device: Switching behaviour and size effect.}, url = {http://dblp.uni-trier.de/db/conf/iscas/iscas2017.html#AbunahlaMJA17}, year = 2017 }