Abstract
This work presents a theoretical study of the excitonic properties of
Si1-xGex cylindrical quantum wires surrounded by a Si matrix,
considering two possibilities for the conduction band alignment, type I
and type II. The effect of nonabrupt interfaces between these materials
on the exciton energies is investigated: an interfacial region of 15
angstrom in a 50 angstrom wide Si0.85Ge0.15(Si0.7Ge0.3) type-I (type-II)
quantum wire leads to an exciton energy blueshift of the order of 10
meV. The excitonic behavior under an applied magnetic field parallel to
the wire axis is also studied: exciton energies in type-I wires are
weakly affected, while for type-II wires, increasing the field causes
the electron angular momentum to change almost periodically, giving rise
to Aharonov-Bohm oscillations of the exciton ground state energy.
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