A study of the effect of the presence of BIT (Bi4Ti3O12) in the
dielectric and optical properties of the CaCu3Ti4O12 (CCTO) is
presented. The samples were prepared by the solid state procedure.
Mechanical alloying followed by the solid state procedure has been used
successfully to produce powders of CaCu3Ti4O12 (CCTO) and BIT
(Bi4Ti3O12) to be used in the composites. We also look at the effect of
the grain size of the BIT and CCTO in the final properties of the
composite. The samples were studied using X-Ray diffraction, scanning
electron microscopy (SEM), Raman and infrared spectroscopy. We also did
a study of the dielectric function K and dielectric loss of the samples.
The role played by the grain size of CCTO and BIT in the dielectric
constant and structural properties of the substrates are discussed. For
frequencies below 10 MHz the K value presented by the CCTO100 sample is
always higher than the K value presented by the BIT100 sample. At 100 Hz
the value of K 1900 for the CCTO100 sample and 288 for the BIT100
sample. However for the composite sample one has an unexpected result.
The dielectric constant is higher for all the frequencies under study.
At 100 Hz the value of the K is around 10.000 for the BIT10 sample.
Which is more than one order bigger compared to the CCTO100 value for
the same frequency. Therefore, these measurements confirm the potential
use of such materials for small high dielectric planar devices. These
composites are also attractive for capacitor applications and certainly
for microelectronics, microwave devices (cell mobile phones for
example), where the miniaturization of the devices is crucial.
%0 Journal Article
%1 WOS:000244889600032
%A Pinheiro, A G
%A Pereira, F M M
%A Santos, M R P
%A Rocha, H H B
%A Sombra, A S B
%C ONE NEW YORK PLAZA, SUITE 4600, NEW YORK, NY, UNITED STATES
%D 2007
%I SPRINGER
%J JOURNAL OF MATERIALS SCIENCE
%K imported
%N 6
%P 2112-2120
%R 10.1007/s10853-006-1190-5
%T Electric properties of Bi4Ti3O12(BIT)-CaCu3Ti4O12 (CCTO) composite
substrates for high dielectric constant devices
%V 42
%X A study of the effect of the presence of BIT (Bi4Ti3O12) in the
dielectric and optical properties of the CaCu3Ti4O12 (CCTO) is
presented. The samples were prepared by the solid state procedure.
Mechanical alloying followed by the solid state procedure has been used
successfully to produce powders of CaCu3Ti4O12 (CCTO) and BIT
(Bi4Ti3O12) to be used in the composites. We also look at the effect of
the grain size of the BIT and CCTO in the final properties of the
composite. The samples were studied using X-Ray diffraction, scanning
electron microscopy (SEM), Raman and infrared spectroscopy. We also did
a study of the dielectric function K and dielectric loss of the samples.
The role played by the grain size of CCTO and BIT in the dielectric
constant and structural properties of the substrates are discussed. For
frequencies below 10 MHz the K value presented by the CCTO100 sample is
always higher than the K value presented by the BIT100 sample. At 100 Hz
the value of K 1900 for the CCTO100 sample and 288 for the BIT100
sample. However for the composite sample one has an unexpected result.
The dielectric constant is higher for all the frequencies under study.
At 100 Hz the value of the K is around 10.000 for the BIT10 sample.
Which is more than one order bigger compared to the CCTO100 value for
the same frequency. Therefore, these measurements confirm the potential
use of such materials for small high dielectric planar devices. These
composites are also attractive for capacitor applications and certainly
for microelectronics, microwave devices (cell mobile phones for
example), where the miniaturization of the devices is crucial.
@article{WOS:000244889600032,
abstract = {A study of the effect of the presence of BIT (Bi4Ti3O12) in the
dielectric and optical properties of the CaCu3Ti4O12 (CCTO) is
presented. The samples were prepared by the solid state procedure.
Mechanical alloying followed by the solid state procedure has been used
successfully to produce powders of CaCu3Ti4O12 (CCTO) and BIT
(Bi4Ti3O12) to be used in the composites. We also look at the effect of
the grain size of the BIT and CCTO in the final properties of the
composite. The samples were studied using X-Ray diffraction, scanning
electron microscopy (SEM), Raman and infrared spectroscopy. We also did
a study of the dielectric function K and dielectric loss of the samples.
The role played by the grain size of CCTO and BIT in the dielectric
constant and structural properties of the substrates are discussed. For
frequencies below 10 MHz the K value presented by the CCTO100 sample is
always higher than the K value presented by the BIT100 sample. At 100 Hz
the value of K 1900 for the CCTO100 sample and 288 for the BIT100
sample. However for the composite sample one has an unexpected result.
The dielectric constant is higher for all the frequencies under study.
At 100 Hz the value of the K is around 10.000 for the BIT10 sample.
Which is more than one order bigger compared to the CCTO100 value for
the same frequency. Therefore, these measurements confirm the potential
use of such materials for small high dielectric planar devices. These
composites are also attractive for capacitor applications and certainly
for microelectronics, microwave devices (cell mobile phones for
example), where the miniaturization of the devices is crucial.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {ONE NEW YORK PLAZA, SUITE 4600, NEW YORK, NY, UNITED STATES},
author = {Pinheiro, A G and Pereira, F M M and Santos, M R P and Rocha, H H B and Sombra, A S B},
biburl = {https://www.bibsonomy.org/bibtex/2b3513ae1a61869bcfcfa45658674f5a1/ppgfis_ufc_br},
doi = {10.1007/s10853-006-1190-5},
interhash = {902d640aaf143908c06db0b0feacbe2a},
intrahash = {b3513ae1a61869bcfcfa45658674f5a1},
issn = {0022-2461},
journal = {JOURNAL OF MATERIALS SCIENCE},
keywords = {imported},
number = 6,
pages = {2112-2120},
publisher = {SPRINGER},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Electric properties of Bi4Ti3O12(BIT)-CaCu3Ti4O12 (CCTO) composite
substrates for high dielectric constant devices},
tppubtype = {article},
volume = 42,
year = 2007
}