%0 Journal Article %1 journals/mj/HentschelWGKDKV19 %A Hentschel, Raoul %A Wachowiak, Andre %A Großer, A. %A Kotzea, Simon %A Debald, A. %A Kalisch, Holger %A Vescan, Andrei %A Jahn, A. %A Schmult, Stefan %A Mikolajick, Thomas %D 2019 %J Microelectron. J. %K dblp %P 42-45 %T Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect. %U http://dblp.uni-trier.de/db/journals/mj/mj91.html#HentschelWGKDKV19 %V 91

@article{journals/mj/HentschelWGKDKV19, added-at = {2023-09-30T00:00:00.000+0200}, author = {Hentschel, Raoul and Wachowiak, Andre and Großer, A. and Kotzea, Simon and Debald, A. and Kalisch, Holger and Vescan, Andrei and Jahn, A. and Schmult, Stefan and Mikolajick, Thomas}, biburl = {https://www.bibsonomy.org/bibtex/217a8eb51860b504f4ccf4fdaf6fc9244/dblp}, ee = {https://doi.org/10.1016/j.mejo.2019.07.011}, interhash = {a78c437dcd586f2aa395097831f30c8c}, intrahash = {17a8eb51860b504f4ccf4fdaf6fc9244}, journal = {Microelectron. J.}, keywords = {dblp}, pages = {42-45}, timestamp = {2024-04-08T21:37:16.000+0200}, title = {Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect.}, url = {http://dblp.uni-trier.de/db/journals/mj/mj91.html#HentschelWGKDKV19}, volume = 91, year = 2019 }