%0 Journal Article %1 WOS:000249474100048 %A Jr., F F Maia %A Caetano, E W S %A da Costa, J A P %A Freire, V N %C 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA %D 2007 %I AMER INST PHYSICS %J JOURNAL OF APPLIED PHYSICS %K imported %N 5 %R 10.1063/1.2769334 %T High lattice temperature effects on the ultrafast electron transport in 4H-SiC %V 102 %X High lattice temperature effects on the electron transport transient in the 4H-SiC c-parallel direction are studied within a single equivalent isotropic valley picture in the momentum and energy relaxation time approximation. The ultrafast transport regime occurs in a subpicosecond scale (< 0.2 ps), during which an overshoot in the electron drift velocity starts to be evident for high electric fields (greater than or similar to 60 kV/cm), depending on the lattice temperature. An increase of the electric field strength shifts the overshoot peak of the electron drift velocity to an earlier time. For a strong enough electric field, a higher lattice temperature cannot eliminate the electron drift overshoot effect, but can reduce it considerably due to a stronger electron-phonon scattering. (C) 2007 American Institute of Physics.

@article{WOS:000249474100048, abstract = {High lattice temperature effects on the electron transport transient in the 4H-SiC c-parallel direction are studied within a single equivalent isotropic valley picture in the momentum and energy relaxation time approximation. The ultrafast transport regime occurs in a subpicosecond scale (< 0.2 ps), during which an overshoot in the electron drift velocity starts to be evident for high electric fields (greater than or similar to 60 kV/cm), depending on the lattice temperature. An increase of the electric field strength shifts the overshoot peak of the electron drift velocity to an earlier time. For a strong enough electric field, a higher lattice temperature cannot eliminate the electron drift overshoot effect, but can reduce it considerably due to a stronger electron-phonon scattering. (C) 2007 American Institute of Physics.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA}, author = {Jr., F F Maia and Caetano, E W S and da Costa, J A P and Freire, V N}, biburl = {https://www.bibsonomy.org/bibtex/2ea0bb9932b9c4141471900f16466abbe/ppgfis_ufc_br}, doi = {10.1063/1.2769334}, interhash = {a91dd939eeab0138da76c626460d999d}, intrahash = {ea0bb9932b9c4141471900f16466abbe}, issn = {0021-8979}, journal = {JOURNAL OF APPLIED PHYSICS}, keywords = {imported}, number = 5, publisher = {AMER INST PHYSICS}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {High lattice temperature effects on the ultrafast electron transport in 4H-SiC}, tppubtype = {article}, volume = 102, year = 2007 }