Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices.
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%0 Journal Article
%1 journals/mr/LeeLLWSL08
%A Lee, S.
%A Long, J. P.
%A Lucovsky, Gerald
%A Whitten, J. L.
%A Seo, H.
%A Lüning, J.
%D 2008
%J Microelectron. Reliab.
%K dblp
%N 3
%P 364-369
%T Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices.
%U http://dblp.uni-trier.de/db/journals/mr/mr48.html#LeeLLWSL08
%V 48
@article{journals/mr/LeeLLWSL08,
added-at = {2020-02-22T00:00:00.000+0100},
author = {Lee, S. and Long, J. P. and Lucovsky, Gerald and Whitten, J. L. and Seo, H. and Lüning, J.},
biburl = {https://www.bibsonomy.org/bibtex/26d03c33be94eea38b23d307cc87b3655/dblp},
ee = {https://doi.org/10.1016/j.microrel.2007.07.068},
interhash = {af9a9dc108ee90855672577ef8ccd4b4},
intrahash = {6d03c33be94eea38b23d307cc87b3655},
journal = {Microelectron. Reliab.},
keywords = {dblp},
number = 3,
pages = {364-369},
timestamp = {2020-02-25T13:22:34.000+0100},
title = {Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr48.html#LeeLLWSL08},
volume = 48,
year = 2008
}
