@inproceedings{conf/asicon/ZhouFLTWGSXDC15,
added-at = {2018-07-17T00:00:00.000+0200},
author = {Zhou, Xingye and Feng, Zhihong and Lv, Yuanjie and Tan, Xin and Wang, Yuangang and Gu, Guodong and Song, Xubo and Xu, Peng and Dun, Shaobo and Cai, Shujun},
biburl = {https://www.bibsonomy.org/bibtex/2c1987154f5acbd9bd6d14bc3827bc7d2/dblp},
booktitle = {ASICON},
crossref = {conf/asicon/2015},
ee = {https://doi.org/10.1109/ASICON.2015.7516946},
interhash = {c09cc2403a746817c29655b738f82aec},
intrahash = {c1987154f5acbd9bd6d14bc3827bc7d2},
isbn = {978-1-4799-8485-5},
keywords = {dblp},
pages = {1-4},
publisher = {IEEE},
timestamp = {2018-07-18T11:44:51.000+0200},
title = {Dependency of current collapse on the device structure of GaN-based HEMTs.},
url = {http://dblp.uni-trier.de/db/conf/asicon/asicon2015.html#ZhouFLTWGSXDC15},
year = 2015
}