%0 Journal Article %1 Park:2011:J-Nanosci-Nanotechnol:22103165 %A Park, J H %A Byun, D %A Lee, J K %D 2011 %J J Nanosci Nanotechnol %K aempl %N 8 %P 7234-7237 %T Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition %U http://www.ncbi.nlm.nih.gov/pubmed/22103165 %V 11 %X Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/O+Sn mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/O+Sn mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) ohms cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/O+Sn mole ratio of 0.35.

@article{Park:2011:J-Nanosci-Nanotechnol:22103165, abstract = {Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) ohms cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35.}, added-at = {2015-10-08T06:08:22.000+0200}, author = {Park, J H and Byun, D and Lee, J K}, biburl = {https://www.bibsonomy.org/bibtex/2d43ac61f406e994db1a73cb200311d12/l1th1um}, description = {Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor dep... - PubMed - NCBI}, interhash = {c09df22e840f88c05bc6f2a26eb48a25}, intrahash = {d43ac61f406e994db1a73cb200311d12}, journal = {J Nanosci Nanotechnol}, keywords = {aempl}, month = aug, number = 8, pages = {7234-7237}, pmid = {22103165}, timestamp = {2015-10-08T06:08:22.000+0200}, title = {Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition}, url = {http://www.ncbi.nlm.nih.gov/pubmed/22103165}, volume = 11, year = 2011 }