%0 Journal Article %1 tajinderkaurhssingh2013theory %A Tajinder Kaur, H. S. Singh, A. K. Sinha %D 2013 %E and Fabricio Moraes de Almeida, %J SCIECNE PARK %K & Heterostructures Optoelectronic Photonic devices double quantum well %N 1 %T Theory of Resonant Electron Tunneling On Photonic Crystal Hetero-Structure Junction. %U http://www.scienceparks.in/ArticlePDF/4.pdf %V 1 %X We study the resonant photonic states of photonic double quantum well (PDQW) heterostructures composed of two different photonic crystals.The device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant inter band tunneling spin filter exploits large valence band spin orbit interaction to provide strong spin selectivity. The bi-directional spin pump induces the simultaneous flow of oppositely spin-polarized current components in opposite directions through spin-dependent resonant tunneling. The efficiency of resonant tunneling spin devices can be improved when the effects of structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA) are combined properly, and incorporated into device design. The current spin polarizations of the proposed devices are electrically controllable, and potentially amenable to high-speed modulation. In principal, the electrically modulated spin-polarized current source could be integrated in optoelectronic devices for added functionality.

@article{tajinderkaurhssingh2013theory, abstract = {We study the resonant photonic states of photonic double quantum well (PDQW) heterostructures composed of two different photonic crystals.The device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant inter band tunneling spin filter exploits large valence band spin orbit interaction to provide strong spin selectivity. The bi-directional spin pump induces the simultaneous flow of oppositely spin-polarized current components in opposite directions through spin-dependent resonant tunneling. The efficiency of resonant tunneling spin devices can be improved when the effects of structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA) are combined properly, and incorporated into device design. The current spin polarizations of the proposed devices are electrically controllable, and potentially amenable to high-speed modulation. In principal, the electrically modulated spin-polarized current source could be integrated in optoelectronic devices for added functionality. }, added-at = {2014-08-15T10:52:30.000+0200}, author = {{Tajinder Kaur, H. S. Singh}, A. K. Sinha}, biburl = {https://www.bibsonomy.org/bibtex/26d30013536790fb422f0b4d0cf4f8160/sciencejournal}, editor = {and Fabricio Moraes de Almeida}, interhash = {ce836d3b4aecfee6102ed6a43d1d20f8}, intrahash = {6d30013536790fb422f0b4d0cf4f8160}, journal = {SCIECNE PARK}, keywords = {& Heterostructures Optoelectronic Photonic devices double quantum well}, month = {July}, number = 1, timestamp = {2014-08-15T10:52:30.000+0200}, title = {Theory of Resonant Electron Tunneling On Photonic Crystal Hetero-Structure Junction.}, url = {http://www.scienceparks.in/ArticlePDF/4.pdf}, volume = 1, year = 2013 }