%0 Conference Paper %1 conf/iscas/BangKKCK19 %A Bang, Byeong-Jun %A jeong Kwon, Hyun %A Kim, Young Hwan %A Cho, Kyoung-Rok %A Kim, Hi-Seok %B ISCAS %D 2019 %I IEEE %K dblp %P 1-4 %T Statistical Modeling of Read Static Noise Margin for 6-Transistor SRAM cell. %U http://dblp.uni-trier.de/db/conf/iscas/iscas2019.html#BangKKCK19 %@ 978-1-7281-0397-6

@inproceedings{conf/iscas/BangKKCK19, added-at = {2019-07-14T00:00:00.000+0200}, author = {Bang, Byeong-Jun and jeong Kwon, Hyun and Kim, Young Hwan and Cho, Kyoung-Rok and Kim, Hi-Seok}, biburl = {https://www.bibsonomy.org/bibtex/263580a43626d2d758d7863bf142cedf1/dblp}, booktitle = {ISCAS}, crossref = {conf/iscas/2019}, ee = {https://doi.org/10.1109/ISCAS.2019.8702663}, interhash = {d24f949fe9e86b77998e679571039ce1}, intrahash = {63580a43626d2d758d7863bf142cedf1}, isbn = {978-1-7281-0397-6}, keywords = {dblp}, pages = {1-4}, publisher = {IEEE}, timestamp = {2019-07-16T11:39:08.000+0200}, title = {Statistical Modeling of Read Static Noise Margin for 6-Transistor SRAM cell.}, url = {http://dblp.uni-trier.de/db/conf/iscas/iscas2019.html#BangKKCK19}, year = 2019 }