%0 Journal Article %1 journals/mr/HollandEAEABI11 %A Holland, Paul M. %A Elwin, Matt P. %A Anteney, Iain %A Ellis, John %A Armstrong, Laurence %A Birchby, Glen %A Igic, Petar %D 2011 %J Microelectron. Reliab. %K dblp %N 3 %P 529-535 %T LDMOSFET with drain potential suppression for 100 V Power IC technology. %U http://dblp.uni-trier.de/db/journals/mr/mr51.html#HollandEAEABI11 %V 51

@article{journals/mr/HollandEAEABI11, added-at = {2023-10-31T00:00:00.000+0100}, author = {Holland, Paul M. and Elwin, Matt P. and Anteney, Iain and Ellis, John and Armstrong, Laurence and Birchby, Glen and Igic, Petar}, biburl = {https://www.bibsonomy.org/bibtex/2b65483dab7446798a3ea7b15d1b8695e/dblp}, ee = {https://doi.org/10.1016/j.microrel.2010.09.015}, interhash = {1d733511673c8dcf3832c8dbd6626afe}, intrahash = {b65483dab7446798a3ea7b15d1b8695e}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = 3, pages = {529-535}, timestamp = {2024-04-09T02:49:37.000+0200}, title = {LDMOSFET with drain potential suppression for 100 V Power IC technology.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr51.html#HollandEAEABI11}, volume = 51, year = 2011 }