%0 Journal Article %1 journals/mj/FangYQXYBZ22 %A Fang, Dong %A Yang, Guang %A Qiao, Ming %A Xiao, Kui %A Yang, Xiangyu %A Bian, Zheng %A Zhang, Bo %D 2022 %J Microelectron. J. %K dblp %P 105616 %T Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. %U http://dblp.uni-trier.de/db/journals/mj/mj130.html#FangYQXYBZ22 %V 130

@article{journals/mj/FangYQXYBZ22, added-at = {2023-01-15T00:00:00.000+0100}, author = {Fang, Dong and Yang, Guang and Qiao, Ming and Xiao, Kui and Yang, Xiangyu and Bian, Zheng and Zhang, Bo}, biburl = {https://www.bibsonomy.org/bibtex/2e12893c7b2967bb052c741b4d26b9ea5/dblp}, ee = {https://doi.org/10.1016/j.mejo.2022.105616}, interhash = {da3dcce7cb0bd233a308ab73c63d02b7}, intrahash = {e12893c7b2967bb052c741b4d26b9ea5}, journal = {Microelectron. J.}, keywords = {dblp}, pages = 105616, timestamp = {2024-04-08T21:37:21.000+0200}, title = {Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region.}, url = {http://dblp.uni-trier.de/db/journals/mj/mj130.html#FangYQXYBZ22}, volume = 130, year = 2022 }