%0 Journal Article %1 journals/mr/BayerlLAPNAG13 %A Bayerl, Albin %A Lanza, Mario %A Aguilera, Lidia %A Porti, Marc %A Nafría, Montserrat %A Aymerich, Xavier %A Gendt, Stefan De %D 2013 %J Microelectron. Reliab. %K dblp %N 6 %P 867-871 %T Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. %U http://dblp.uni-trier.de/db/journals/mr/mr53.html#BayerlLAPNAG13 %V 53

@article{journals/mr/BayerlLAPNAG13, added-at = {2020-02-22T00:00:00.000+0100}, author = {Bayerl, Albin and Lanza, Mario and Aguilera, Lidia and Porti, Marc and Nafría, Montserrat and Aymerich, Xavier and Gendt, Stefan De}, biburl = {https://www.bibsonomy.org/bibtex/2d566661a8a42d17dc85be7c4ea932058/dblp}, ee = {https://www.wikidata.org/entity/Q60229107}, interhash = {e1976eea1737501a240471f4181d8154}, intrahash = {d566661a8a42d17dc85be7c4ea932058}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = 6, pages = {867-871}, timestamp = {2020-02-25T13:25:23.000+0100}, title = {Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr53.html#BayerlLAPNAG13}, volume = 53, year = 2013 }