%0 Journal Article %1 journals/ieicet/StoffelZS06 %A Stoffel, Mathieu %A Zhang, Jing %A Schmidt, Oliver G. %D 2006 %J IEICE Trans. Electron. %K dblp %N 7 %P 921-925 %T Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates. %U http://dblp.uni-trier.de/db/journals/ieicet/ieicet89c.html#StoffelZS06 %V 89-C

@article{journals/ieicet/StoffelZS06, added-at = {2020-04-11T00:00:00.000+0200}, author = {Stoffel, Mathieu and Zhang, Jing and Schmidt, Oliver G.}, biburl = {https://www.bibsonomy.org/bibtex/29aede120e3cab0ba77aae481a8e12720/dblp}, ee = {https://www.wikidata.org/entity/Q62340803}, interhash = {e2499708ae4a2d6f20ef48ef09084b5d}, intrahash = {9aede120e3cab0ba77aae481a8e12720}, journal = {IEICE Trans. Electron.}, keywords = {dblp}, number = 7, pages = {921-925}, timestamp = {2020-04-14T11:39:17.000+0200}, title = {Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates.}, url = {http://dblp.uni-trier.de/db/journals/ieicet/ieicet89c.html#StoffelZS06}, volume = {89-C}, year = 2006 }