%0 Journal Article %1 journals/mr/BerbelFGLBB11 %A Berbel, Néstor %A Fernández-García, Raúl %A Gil, Ignacio %A Li, Binhong %A Boyer, Alexandre %A Bendhia, Sonia %D 2011 %J Microelectron. Reliab. %K dblp %N 9-11 %P 1564-1567 %T Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout. %U http://dblp.uni-trier.de/db/journals/mr/mr51.html#BerbelFGLBB11 %V 51

@article{journals/mr/BerbelFGLBB11, added-at = {2023-11-20T00:00:00.000+0100}, author = {Berbel, Néstor and Fernández-García, Raúl and Gil, Ignacio and Li, Binhong and Boyer, Alexandre and Bendhia, Sonia}, biburl = {https://www.bibsonomy.org/bibtex/232102a69101c4194c258265b35bc8b08/dblp}, ee = {https://doi.org/10.1016/j.microrel.2011.06.041}, interhash = {f5662246a7d2ee02bb32e3681c0c0408}, intrahash = {32102a69101c4194c258265b35bc8b08}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = {9-11}, pages = {1564-1567}, timestamp = {2024-04-09T02:48:51.000+0200}, title = {Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr51.html#BerbelFGLBB11}, volume = 51, year = 2011 }