Energy level broadening control in quantum dots by interfacial doping
SOLID STATE COMMUNICATIONS, 113 (2):
115-119 (1999)DOI: 10.1016/S0038-1098(99)00449-4
Abstract
A method is proposed to diminish the energy level broadening in quantum
dots due to size fluctuations. It is shown that doping the Faded
interface region of quantum dots can considerably reduce the broadening
of their energy levels. In the case of spherical GaAs/Al0.3Ga0.7As dots
of radii similar to 50 Angstrom and interface width 20 Angstrom, the
presence of a Si donor in the middle of the interfaces can decrease
their energy level broadening by as much as 20 meV. (C) 1999 Elsevier
Science Ltd. All rights reserved.