%0 Generic %1 satou2016fitting %A Satou, Akira %A Tamamushi, Gen %A Sugawara, Kenta %A Mitsushio, Junki %A Ryzhii, Victor %A Otsuji, Taiichi %D 2016 %K graphene %R 10.1109/TED.2016.2578325 %T A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities %U http://arxiv.org/abs/1603.00099 %X A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.

@misc{satou2016fitting, abstract = {A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.}, added-at = {2021-03-13T21:21:23.000+0100}, author = {Satou, Akira and Tamamushi, Gen and Sugawara, Kenta and Mitsushio, Junki and Ryzhii, Victor and Otsuji, Taiichi}, biburl = {https://www.bibsonomy.org/bibtex/22f1b098831279ad6a584d8c74e3c3ab2/cmcneile}, description = {A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities}, doi = {10.1109/TED.2016.2578325}, interhash = {6979d59d3d3d8f931612604052c46e95}, intrahash = {2f1b098831279ad6a584d8c74e3c3ab2}, keywords = {graphene}, note = {cite arxiv:1603.00099Comment: 8 pages, 6 figures}, timestamp = {2021-03-13T21:21:23.000+0100}, title = {A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities}, url = {http://arxiv.org/abs/1603.00099}, year = 2016 }