Metal-insulator transition in 2D: Anderson localization by
temperature-dependent disorder?
B. Altshuler, D. Maslov, and V. Pudalov. (1999)cite arxiv:cond-mat/9909353
Comment: Presented at the VIII International Conference on "Hopping and
Related Phenomena", Sept. 99, Murcia, Spain. To be published in: Phys. Stat.
Sol. Extended version will be posted later.
Abstract
A generalization of the single-parameter scaling theory of localization is
proposed for the case when the random potential depends on temperature. The
scaling equation describing the behavior of the resistance is derived. It is
shown that the competition between the metallic-like temperature dependence of
the Drude resistivity and localization leads to a maximum (minimum) at higher
(lower) temperatures. An illustration of a metal-insulator transition in the
model of charged traps, whose concentration depends on temperature, is
presented.
Description
Metal-insulator transition in 2D: Anderson localization by
temperature-dependent disorder?
cite arxiv:cond-mat/9909353
Comment: Presented at the VIII International Conference on "Hopping and
Related Phenomena", Sept. 99, Murcia, Spain. To be published in: Phys. Stat.
Sol. Extended version will be posted later
%0 Generic
%1 Altshuler1999
%A Altshuler, B. L.
%A Maslov, D. L.
%A Pudalov, V. M.
%D 1999
%K 2d MI_transition anderson theory
%T Metal-insulator transition in 2D: Anderson localization by
temperature-dependent disorder?
%U http://arxiv.org/abs/cond-mat/9909353
%X A generalization of the single-parameter scaling theory of localization is
proposed for the case when the random potential depends on temperature. The
scaling equation describing the behavior of the resistance is derived. It is
shown that the competition between the metallic-like temperature dependence of
the Drude resistivity and localization leads to a maximum (minimum) at higher
(lower) temperatures. An illustration of a metal-insulator transition in the
model of charged traps, whose concentration depends on temperature, is
presented.
@misc{Altshuler1999,
abstract = { A generalization of the single-parameter scaling theory of localization is
proposed for the case when the random potential depends on temperature. The
scaling equation describing the behavior of the resistance is derived. It is
shown that the competition between the metallic-like temperature dependence of
the Drude resistivity and localization leads to a maximum (minimum) at higher
(lower) temperatures. An illustration of a metal-insulator transition in the
model of charged traps, whose concentration depends on temperature, is
presented.
},
added-at = {2009-07-23T14:10:18.000+0200},
author = {Altshuler, B. L. and Maslov, D. L. and Pudalov, V. M.},
biburl = {https://www.bibsonomy.org/bibtex/251fb0362430f3f2bdba5fab36c55bc45/bsipos},
description = {Metal-insulator transition in 2D: Anderson localization by
temperature-dependent disorder?},
interhash = {0579b58474907245dd875f55883a075e},
intrahash = {51fb0362430f3f2bdba5fab36c55bc45},
keywords = {2d MI_transition anderson theory},
note = {cite arxiv:cond-mat/9909353
Comment: Presented at the VIII International Conference on "Hopping and
Related Phenomena", Sept. 99, Murcia, Spain. To be published in: Phys. Stat.
Sol. Extended version will be posted later},
timestamp = {2009-07-23T14:10:18.000+0200},
title = {Metal-insulator transition in 2D: Anderson localization by
temperature-dependent disorder?},
url = {http://arxiv.org/abs/cond-mat/9909353},
year = 1999
}