%0 Journal Article %1 WOS:000223500800010 %A Caetano, EWS %A Freire, VN %A Farias, GA %A da Silva, EF %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2004 %I ELSEVIER SCIENCE BV %J APPLIED SURFACE SCIENCE %K boron excitons} nitride; optical properties; quantum wires; {gallium %N 1-4 %P 50-53 %R 10.1016/j.apsusc.2004.05.050 %T Optical properties of zincblende GaN/BN cylindrical nanowires %V 234 %X We calculate the confined exciton energy of zincblende GaN/BN cylindrical nanowires using a two-parameter variational approach within the effective mass approximation. Feasibility of light emission in the 300-700 nm range is attained, depending both on the nanowire radius and the graded interface thickness. It is shown that in actual zincblende GaN/BN nanowire samples, the existence of non-abrupt interfaces can blue shift the exciton recombination energy up to similar to100 meV for non-abrupt interface thickness of just a few monolayers. (C) 2004 Published by Elsevier B.V.

@article{WOS:000223500800010, abstract = {We calculate the confined exciton energy of zincblende GaN/BN cylindrical nanowires using a two-parameter variational approach within the effective mass approximation. Feasibility of light emission in the 300-700 nm range is attained, depending both on the nanowire radius and the graded interface thickness. It is shown that in actual zincblende GaN/BN nanowire samples, the existence of non-abrupt interfaces can blue shift the exciton recombination energy up to similar to100 meV for non-abrupt interface thickness of just a few monolayers. (C) 2004 Published by Elsevier B.V.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {Caetano, EWS and Freire, VN and Farias, GA and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/278e073ca5342cfbb49403e3de7ee9f3a/ppgfis_ufc_br}, doi = {10.1016/j.apsusc.2004.05.050}, interhash = {8e9b785560d49c9d5053998768a6aa63}, intrahash = {78e073ca5342cfbb49403e3de7ee9f3a}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {boron excitons} nitride; optical properties; quantum wires; {gallium}, note = {9th International Conference on Formation of Semiconductor Interfaces (ICFSI 9), Madrid, SPAIN, SEP 15-19, 2003}, number = {1-4}, pages = {50-53}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Optical properties of zincblende GaN/BN cylindrical nanowires}, tppubtype = {article}, volume = 234, year = 2004 }