%0 Journal Article %1 journals/mr/Voldman05a %A Voldman, Steven H. %D 2005 %J Microelectron. Reliab. %K dblp %N 3-4 %P 437-455 %T A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II - Latchup. %U http://dblp.uni-trier.de/db/journals/mr/mr45.html#Voldman05a %V 45

@article{journals/mr/Voldman05a, added-at = {2020-02-22T00:00:00.000+0100}, author = {Voldman, Steven H.}, biburl = {https://www.bibsonomy.org/bibtex/278fa30bdac7e7d1bba9ae43dcc0ec5f3/dblp}, ee = {https://doi.org/10.1016/j.microrel.2004.12.001}, interhash = {aad4d3bd9a34f6a294400670b0edfe42}, intrahash = {78fa30bdac7e7d1bba9ae43dcc0ec5f3}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = {3-4}, pages = {437-455}, timestamp = {2020-02-25T13:24:54.000+0100}, title = {A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II - Latchup.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr45.html#Voldman05a}, volume = 45, year = 2005 }