Epitaxial 3C-SiC films were grown on silicon-on-insulator
(SOI) substrates with 111 and 100 orientations by a
chemical vapor deposition (CVD) method using an alternating
gas supply. The SiC films were removed from the SOI
substrates by chemical etching treatments. The sizes of the
free-standing SiC (111) films, which were restricted by crack
formation during the etching process, depended on the
thickness and crystal quality of the silicon overlayer (SOL)
on SOI substrates, while that of the free-standing SiC (100)
film was maintained even after the etching. Carbon nanotubes
(CNTs) were formed on both C and Si faces of the SiC (111)
films by surface decomposition at 1973 K at 1.33?10-2 Pa. The
growth rate of CNTs on the C face was three times faster than
that of CNTs on the Si face. A free-standing CNT film was
formed after complete surface decomposition of the SiC film.
The area of the free-standing CNT film was about 80 mm2. On
the other hand, graphite was formed on the SiC (100) film
surface which was removed from the SOI (100) substrate.
%0 Journal Article
%1 Nagano2003a
%A Nagano, T.
%A Ishikawa, Y.
%A Shibata, N.
%D 2003
%J Jpn. J. Appl. Phys.
%K SiC, carbon, chemical decomposition deposition, graphite, nanotube, orientation, silicon-on-insulator, vapor
%N 4A
%P 1717--1721
%R DOI : 10.1143/JJAP.42.1717
%T Preparation of Silicon-on-Insulator Substrate on Large Free-Standing
Carbon Nanotube Film Formation by Surface Decomposition of SiC Film
%U URL : http://jjap.ipap.jp/link?JJAP/42/1717/
%V 42
%X Epitaxial 3C-SiC films were grown on silicon-on-insulator
(SOI) substrates with 111 and 100 orientations by a
chemical vapor deposition (CVD) method using an alternating
gas supply. The SiC films were removed from the SOI
substrates by chemical etching treatments. The sizes of the
free-standing SiC (111) films, which were restricted by crack
formation during the etching process, depended on the
thickness and crystal quality of the silicon overlayer (SOL)
on SOI substrates, while that of the free-standing SiC (100)
film was maintained even after the etching. Carbon nanotubes
(CNTs) were formed on both C and Si faces of the SiC (111)
films by surface decomposition at 1973 K at 1.33?10-2 Pa. The
growth rate of CNTs on the C face was three times faster than
that of CNTs on the Si face. A free-standing CNT film was
formed after complete surface decomposition of the SiC film.
The area of the free-standing CNT film was about 80 mm2. On
the other hand, graphite was formed on the SiC (100) film
surface which was removed from the SOI (100) substrate.
@article{Nagano2003a,
abstract = {Epitaxial 3C-SiC films were grown on silicon-on-insulator
(SOI) substrates with [111] and [100] orientations by a
chemical vapor deposition (CVD) method using an alternating
gas supply. The SiC films were removed from the SOI
substrates by chemical etching treatments. The sizes of the
free-standing SiC (111) films, which were restricted by crack
formation during the etching process, depended on the
thickness and crystal quality of the silicon overlayer (SOL)
on SOI substrates, while that of the free-standing SiC (100)
film was maintained even after the etching. Carbon nanotubes
(CNTs) were formed on both C and Si faces of the SiC (111)
films by surface decomposition at 1973 K at 1.33?10-2 Pa. The
growth rate of CNTs on the C face was three times faster than
that of CNTs on the Si face. A free-standing CNT film was
formed after complete surface decomposition of the SiC film.
The area of the free-standing CNT film was about 80 mm2. On
the other hand, graphite was formed on the SiC (100) film
surface which was removed from the SOI (100) substrate.},
added-at = {2009-11-05T12:01:24.000+0100},
author = {Nagano, T. and Ishikawa, Y. and Shibata, N.},
biburl = {https://www.bibsonomy.org/bibtex/27b20335418b62c6f10bfcb7e52169e09/ghuot},
doi = {DOI : 10.1143/JJAP.42.1717},
institution = {Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya
456-8587, Japan},
interhash = {90be05b40edfbbe9a8da0636c7e0fd15},
intrahash = {7b20335418b62c6f10bfcb7e52169e09},
journal = {Jpn. J. Appl. Phys.},
keywords = {SiC, carbon, chemical decomposition deposition, graphite, nanotube, orientation, silicon-on-insulator, vapor},
number = {4A},
owner = {Guillaume},
pages = {1717--1721},
timestamp = {2009-11-05T12:01:32.000+0100},
title = {Preparation of Silicon-on-Insulator Substrate on Large Free-Standing
Carbon Nanotube Film Formation by Surface Decomposition of SiC Film},
url = {URL : http://jjap.ipap.jp/link?JJAP/42/1717/},
volume = 42,
year = 2003
}