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Overcoming Space‐Charge Effect for Efficient Thick‐Film Non‐Fullerene Organic Solar Cells

, , , , , , , and . Advanced Energy Materials, (July 2018)
DOI: 10.1002/aenm.201801609

Abstract

Organic solar cells (OSCs) containing non‐fullerene acceptors have realized high power conversion efficiency (PCE) up to 14%. However, most of these high‐performance non‐fullerene OSCs have been reported with optimal active layer thickness of about 100 nm, mainly due to the low electron mobility (≈10−4–10−5 cm2 V−1 s−1) of non‐fullerene acceptors, which are not suitable for roll‐to‐roll large‐scale processing. In this work, an efficient non‐fullerene OSC based on poly(5,6‐difluoro‐2,1,3‐benzothiadiazol‐4,7‐diyl)‐alt‐(3,3′″‐di(2‐octyldodecyl)‐2,2′;5′,2″;5″,2′″‐quaterthiophen‐5,5′′′‐diyl) (PffBT4T‐2OD):EH‐IDTBR (consists of electron‐rich indaceno1,2‐b:5,6‐b′dithiophene as the central unit and an electron‐deficient 5,6‐benzoc1,2,5thiadiazole unit flanked with rhodanine as the peripheral group) with thickness‐independent PCE (maintaining a PCE of 9.1% with an active layer thickness of 300 nm) is presented by optimizing device architectures to overcome the space‐charge effects. Optical modeling reveals that most of the incident light is absorbed near the transparent electrode side in thick‐film devices. The transport distance of electrons with lower mobility will therefore be shortened when using inverted device architecture, in which most of the excitons are generated close to the cathode side and therefore substantially reduces the accumulation of electrons in the device. As a result, an efficient thick‐film non‐fullerene OSC is realized. These results provide important guidelines for the development of more efficient thick‐film non‐fullerene OSCs. An efficient thick‐film non‐fullerene organic solar cell based on PffBT4T‐2OD:EH‐IDTBR is realized by optimizing device architectures to shorten the transmission distance of electrons with lower mobility to the cathode, which can effectively weaken the space‐charge effects by preventing electrons from accumulating in the thick‐film devices.

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