%0 Journal Article %1 journals/mr/Voldman05 %A Voldman, Steven H. %D 2005 %J Microelectron. Reliab. %K dblp %N 2 %P 323-340 %T A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD. %U http://dblp.uni-trier.de/db/journals/mr/mr45.html#Voldman05 %V 45

@article{journals/mr/Voldman05, added-at = {2020-02-22T00:00:00.000+0100}, author = {Voldman, Steven H.}, biburl = {https://www.bibsonomy.org/bibtex/28dc61e34ea837bb4c61e912c7377a23b/dblp}, ee = {https://doi.org/10.1016/j.microrel.2004.10.017}, interhash = {ded829ba06bfb89326565e2eec1bfa01}, intrahash = {8dc61e34ea837bb4c61e912c7377a23b}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = 2, pages = {323-340}, timestamp = {2020-02-25T13:27:10.000+0100}, title = {A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr45.html#Voldman05}, volume = 45, year = 2005 }