%0 Conference Paper %1 conf/isvlsi/OhbaMMYTUF06 %A Ohba, Ryuji %A Matsushita, Daisuke %A Muraoka, Koichi %A Yasuda, Shinichi %A Tanamoto, Tetsufumi %A Uchida, Ken %A Fujita, Shinobu %B ISVLSI %D 2006 %I IEEE Computer Society %K dblp %P 231-236 %T Si Nanocrystal MOSFET with Silicon Nitride Tunnel Insulator for High-rate Random Number Generation. %U http://dblp.uni-trier.de/db/conf/isvlsi/isvlsi2006.html#OhbaMMYTUF06 %@ 0-7695-2533-4

@inproceedings{conf/isvlsi/OhbaMMYTUF06, added-at = {2023-03-24T00:00:00.000+0100}, author = {Ohba, Ryuji and Matsushita, Daisuke and Muraoka, Koichi and Yasuda, Shinichi and Tanamoto, Tetsufumi and Uchida, Ken and Fujita, Shinobu}, biburl = {https://www.bibsonomy.org/bibtex/299eb6e7e7096e203a17a7ceb55ad04a3/dblp}, booktitle = {ISVLSI}, crossref = {conf/isvlsi/2006}, ee = {https://doi.ieeecomputersociety.org/10.1109/ISVLSI.2006.83}, interhash = {258a8da1b5c28863d916114c6a64637d}, intrahash = {99eb6e7e7096e203a17a7ceb55ad04a3}, isbn = {0-7695-2533-4}, keywords = {dblp}, pages = {231-236}, publisher = {IEEE Computer Society}, timestamp = {2024-04-10T11:06:14.000+0200}, title = {Si Nanocrystal MOSFET with Silicon Nitride Tunnel Insulator for High-rate Random Number Generation.}, url = {http://dblp.uni-trier.de/db/conf/isvlsi/isvlsi2006.html#OhbaMMYTUF06}, year = 2006 }