Review on 75 305 Ghz Power Amplifier MMIC with 10 14.9 dBm Pout in a 35 nm InGaAs mHEMT Technology
P. Kaimal. INTERNATIONAL JOURNAL OF TREND IN SCIENTIFIC RESEARCH AND DEVELOPMENT, 6 (2):
919-922(February 2022)
Abstract
The broadband power amplifier monolithic microwave ICs with an operating frequency of more than 200 GHz is demonstrated. It is fabricated in a 35 nm gate length metamorphic high electron mobility transistor. The power amplifier produces a minimum output power of 10 dBm with an average value of 12.8 dBm at 75 to 305 GHz. A peak output power of 14.9 dBm and power added efficiency of 6.6 is obtained at 200 GHz. Padmam Kaimal "Review on 75-305 Ghz Power Amplifier MMIC with 10-14.9 dBm Pout in a 35-nm InGaAs mHEMT Technology" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-6 | Issue-2 , February 2022, URL: https://www.ijtsrd.com/papers/ijtsrd49251.pdf Paper URL: https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/49251/review-on-75305-ghz-power-amplifier-mmic-with-10149-dbm-pout-in-a-35nm-ingaas-mhemt-technology/padmam-kaimal
%0 Journal Article
%1 noauthororeditor
%A Kaimal, Padmam
%D 2022
%J INTERNATIONAL JOURNAL OF TREND IN SCIENTIFIC RESEARCH AND DEVELOPMENT
%K (MMIC) (PA) (TFMSL) (mHEMs) HEMT Metamorphic Monolithic amplifier circuit integrated line microstrip microwave power thin-film transmission unit
%N 2
%P 919-922
%T Review on 75 305 Ghz Power Amplifier MMIC with 10 14.9 dBm Pout in a 35 nm InGaAs mHEMT Technology
%U https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/49251/review-on-75305-ghz-power-amplifier-mmic-with-10149-dbm-pout-in-a-35nm-ingaas-mhemt-technology/padmam-kaimal
%V 6
%X The broadband power amplifier monolithic microwave ICs with an operating frequency of more than 200 GHz is demonstrated. It is fabricated in a 35 nm gate length metamorphic high electron mobility transistor. The power amplifier produces a minimum output power of 10 dBm with an average value of 12.8 dBm at 75 to 305 GHz. A peak output power of 14.9 dBm and power added efficiency of 6.6 is obtained at 200 GHz. Padmam Kaimal "Review on 75-305 Ghz Power Amplifier MMIC with 10-14.9 dBm Pout in a 35-nm InGaAs mHEMT Technology" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-6 | Issue-2 , February 2022, URL: https://www.ijtsrd.com/papers/ijtsrd49251.pdf Paper URL: https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/49251/review-on-75305-ghz-power-amplifier-mmic-with-10149-dbm-pout-in-a-35nm-ingaas-mhemt-technology/padmam-kaimal
@article{noauthororeditor,
abstract = {The broadband power amplifier monolithic microwave ICs with an operating frequency of more than 200 GHz is demonstrated. It is fabricated in a 35 nm gate length metamorphic high electron mobility transistor. The power amplifier produces a minimum output power of 10 dBm with an average value of 12.8 dBm at 75 to 305 GHz. A peak output power of 14.9 dBm and power added efficiency of 6.6 is obtained at 200 GHz. Padmam Kaimal "Review on 75-305 Ghz Power Amplifier MMIC with 10-14.9 dBm Pout in a 35-nm InGaAs mHEMT Technology" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-6 | Issue-2 , February 2022, URL: https://www.ijtsrd.com/papers/ijtsrd49251.pdf Paper URL: https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/49251/review-on-75305-ghz-power-amplifier-mmic-with-10149-dbm-pout-in-a-35nm-ingaas-mhemt-technology/padmam-kaimal
},
added-at = {2022-07-22T12:20:24.000+0200},
author = {Kaimal, Padmam},
biburl = {https://www.bibsonomy.org/bibtex/29a6f235c73e7aafbae3234e415821593/ijtsrd},
interhash = {7846b5ea97dfe60403110083bb9617a4},
intrahash = {9a6f235c73e7aafbae3234e415821593},
issn = {2456-6470},
journal = {INTERNATIONAL JOURNAL OF TREND IN SCIENTIFIC RESEARCH AND DEVELOPMENT},
keywords = {(MMIC) (PA) (TFMSL) (mHEMs) HEMT Metamorphic Monolithic amplifier circuit integrated line microstrip microwave power thin-film transmission unit},
language = {english},
month = feb,
number = 2,
pages = {919-922},
timestamp = {2022-07-22T12:20:24.000+0200},
title = {Review on 75 305 Ghz Power Amplifier MMIC with 10 14.9 dBm Pout in a 35 nm InGaAs mHEMT Technology
},
url = {https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/49251/review-on-75305-ghz-power-amplifier-mmic-with-10149-dbm-pout-in-a-35nm-ingaas-mhemt-technology/padmam-kaimal},
volume = 6,
year = 2022
}