The linear and nonlinear optical coefficients of GaAs have been calculated
with the ab-initio full potential self-consistent pseudofunction
energy band method. The computed optical reflectivity compares very
well with experiment and previous empirical pseudopotential calculations,
thus indicating the accuracy of our energy bands. The nonlinear optical
properties also compare well with experiment and do not require a
large local field correction. A direct calculation of the local field
correction from first principles shows the correction limited to
only 5 per cent and thus supports the finding that the local field
correction is small. The only empirical adjustment in our calculation
is setting the fundamental optical gap of the band structure to the
experimental value of 1.52 eV.
Description
Second Harmonic generation in semiconductors; excitonic effects
%0 Journal Article
%1 MA1991
%A MA, H. R.
%A CHUI, S. T.
%A KASOWSKI, R. V.
%A HSU, W. Y.
%D 1991
%J Optics Communications
%K CO ENERGIES; METHOD; MONOLAYER; PSEUDOFUNCTION QUASIPARTICLE SEMICONDUCTORS; SI(111) SURFACE; SUSCEPTIBILITY;
%N 5-6
%P 437--442
%T Abinitio Calculation Of Nonlinear Optical-Properties Of Gaas
%V 85
%X The linear and nonlinear optical coefficients of GaAs have been calculated
with the ab-initio full potential self-consistent pseudofunction
energy band method. The computed optical reflectivity compares very
well with experiment and previous empirical pseudopotential calculations,
thus indicating the accuracy of our energy bands. The nonlinear optical
properties also compare well with experiment and do not require a
large local field correction. A direct calculation of the local field
correction from first principles shows the correction limited to
only 5 per cent and thus supports the finding that the local field
correction is small. The only empirical adjustment in our calculation
is setting the fundamental optical gap of the band structure to the
experimental value of 1.52 eV.
@article{MA1991,
abstract = {The linear and nonlinear optical coefficients of GaAs have been calculated
with the ab-initio full potential self-consistent pseudofunction
energy band method. The computed optical reflectivity compares very
well with experiment and previous empirical pseudopotential calculations,
thus indicating the accuracy of our energy bands. The nonlinear optical
properties also compare well with experiment and do not require a
large local field correction. A direct calculation of the local field
correction from first principles shows the correction limited to
only 5 per cent and thus supports the finding that the local field
correction is small. The only empirical adjustment in our calculation
is setting the fundamental optical gap of the band structure to the
experimental value of 1.52 eV.},
added-at = {2010-01-22T11:58:32.000+0100},
author = {MA, H. R. and CHUI, S. T. and KASOWSKI, R. V. and HSU, W. Y.},
biburl = {https://www.bibsonomy.org/bibtex/2a75a16905546deab7ce61c5c99166002/myrta},
description = {Second Harmonic generation in semiconductors; excitonic effects},
interhash = {137ee53009495a6081186502d6007739},
intrahash = {a75a16905546deab7ce61c5c99166002},
journal = {Optics Communications},
keywords = {CO ENERGIES; METHOD; MONOLAYER; PSEUDOFUNCTION QUASIPARTICLE SEMICONDUCTORS; SI(111) SURFACE; SUSCEPTIBILITY;},
month = {October},
number = {5-6},
owner = {myrta},
pages = {437--442},
sn = {0030-4018},
tc = {8},
timestamp = {2010-01-22T11:58:34.000+0100},
title = {Abinitio Calculation Of Nonlinear Optical-Properties Of Gaas},
ut = {ISI:A1991GL48800012},
volume = 85,
year = 1991
}