We use the macroscopic dielectric continuum model to calculate the
dispersion relation of interface localized optical-phonon modes in GaN
thin films grown on 6H-SiC or sapphire substrate, considering the
presence of a multilayered AI(x)Gal(1-x)N interfacial region between the
film and the substrate. The main influence of the number of layers n at
the interface, which depends on the molar concentration x of the alloy
AI(x)Gal(1-x)N, is to preclude localization of interface phonons. A
small change on the phonon frequencies and branch slopes is also
observed. (C) 2005 Elsevier B.V. All rights reserved.
%0 Journal Article
%1 WOS:000227204400025
%A Albuquerque, EL
%A Barros, EB
%A Freire, VN
%A Mendes, J
%C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
%D 2005
%I ELSEVIER
%J PHYSICS LETTERS A
%K GaN; films; graded interfaces} phonons; thin {optical
%N 2-3
%P 259-263
%R 10.1016/j.physleta.2005.01.007
%T Interface optical phonon localization in graded GaN thin films
%V 336
%X We use the macroscopic dielectric continuum model to calculate the
dispersion relation of interface localized optical-phonon modes in GaN
thin films grown on 6H-SiC or sapphire substrate, considering the
presence of a multilayered AI(x)Gal(1-x)N interfacial region between the
film and the substrate. The main influence of the number of layers n at
the interface, which depends on the molar concentration x of the alloy
AI(x)Gal(1-x)N, is to preclude localization of interface phonons. A
small change on the phonon frequencies and branch slopes is also
observed. (C) 2005 Elsevier B.V. All rights reserved.
@article{WOS:000227204400025,
abstract = {We use the macroscopic dielectric continuum model to calculate the
dispersion relation of interface localized optical-phonon modes in GaN
thin films grown on 6H-SiC or sapphire substrate, considering the
presence of a multilayered AI(x)Gal(1-x)N interfacial region between the
film and the substrate. The main influence of the number of layers n at
the interface, which depends on the molar concentration x of the alloy
AI(x)Gal(1-x)N, is to preclude localization of interface phonons. A
small change on the phonon frequencies and branch slopes is also
observed. (C) 2005 Elsevier B.V. All rights reserved.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS},
author = {Albuquerque, EL and Barros, EB and Freire, VN and Mendes, J},
biburl = {https://www.bibsonomy.org/bibtex/2a7d3a580ed9306d2dd40c23d18181c89/ppgfis_ufc_br},
doi = {10.1016/j.physleta.2005.01.007},
interhash = {fcb9328ec46a56d8714f6268641de634},
intrahash = {a7d3a580ed9306d2dd40c23d18181c89},
issn = {0375-9601},
journal = {PHYSICS LETTERS A},
keywords = {GaN; films; graded interfaces} phonons; thin {optical},
number = {2-3},
pages = {259-263},
publisher = {ELSEVIER},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Interface optical phonon localization in graded GaN thin films},
tppubtype = {article},
volume = 336,
year = 2005
}