Production of bulk, cubic ($\beta$), chemically vapour deposited (CVD)
silicon carbide (SiC)has been scaled up to support commercial requirements.
Free-standing CVD SiC substrates have been produced in sheets up
to 1.5 m (60 inches) across and over 25 m (one inch) thick. The material
can also be grown as smaller, monolithic near-net-shape parts in
many different geometries. The material, commercially known as ?CVD
silicon carbide?, is single-phase, theoretically dense, and 99.999%
pure,$\beta$-SiC.These characteristics lead to product attributes
such as high values of hardness, flexural strength, and thermal conductivity.
Additionally, the product had demonstrated good oxidation resistance
and polishability. Interest has been shown in the material for use
in optics, wear parts, computers and electronic packaging.
%0 Journal Article
%1 Haigis1993
%A Haigis, W. R.
%A Pickering, M. A.
%D 1993
%J Materials and Design
%K carbide; chemical deposition; silicon stability thermal vapour
%N 2
%P 130--132
%R doi:10.1016/0261-3069(93)90007-I
%T Monolithic $\beta$ SiC parts produced by CVD
%V 14
%X Production of bulk, cubic ($\beta$), chemically vapour deposited (CVD)
silicon carbide (SiC)has been scaled up to support commercial requirements.
Free-standing CVD SiC substrates have been produced in sheets up
to 1.5 m (60 inches) across and over 25 m (one inch) thick. The material
can also be grown as smaller, monolithic near-net-shape parts in
many different geometries. The material, commercially known as ?CVD
silicon carbide?, is single-phase, theoretically dense, and 99.999%
pure,$\beta$-SiC.These characteristics lead to product attributes
such as high values of hardness, flexural strength, and thermal conductivity.
Additionally, the product had demonstrated good oxidation resistance
and polishability. Interest has been shown in the material for use
in optics, wear parts, computers and electronic packaging.
@article{Haigis1993,
abstract = {Production of bulk, cubic ($\beta$), chemically vapour deposited (CVD)
silicon carbide (SiC)has been scaled up to support commercial requirements.
Free-standing CVD SiC substrates have been produced in sheets up
to 1.5 m (60 inches) across and over 25 m (one inch) thick. The material
can also be grown as smaller, monolithic near-net-shape parts in
many different geometries. The material, commercially known as ?CVD
silicon carbide?, is single-phase, theoretically dense, and 99.999%
pure,$\beta$-SiC.These characteristics lead to product attributes
such as high values of hardness, flexural strength, and thermal conductivity.
Additionally, the product had demonstrated good oxidation resistance
and polishability. Interest has been shown in the material for use
in optics, wear parts, computers and electronic packaging.},
added-at = {2009-11-05T12:01:24.000+0100},
author = {Haigis, W. R. and Pickering, M. A.},
biburl = {https://www.bibsonomy.org/bibtex/2ae0bfbbf86a0a8d8cbfde78e4df410db/ghuot},
doi = {doi:10.1016/0261-3069(93)90007-I},
institution = {Morton International Advanced Materials, 185 New Boston Street, Woburn,
USA MA 01801},
interhash = {c6b45e7df36a955ed789246c6bd247b6},
intrahash = {ae0bfbbf86a0a8d8cbfde78e4df410db},
journal = {Materials and Design},
keywords = {carbide; chemical deposition; silicon stability thermal vapour},
number = 2,
owner = {Guillaume},
pages = {130--132},
timestamp = {2009-11-05T12:01:28.000+0100},
title = {Monolithic $\beta$ SiC parts produced by CVD},
volume = 14,
year = 1993
}