%0 Journal Article %1 WOS:000295883800043 %A de Sousa, Silvano J %A Detz, H %A Klang, P %A Gornik, E %A Strasser, G %A Smoliner, J %C 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA %D 2011 %I AMER INST PHYSICS %J APPLIED PHYSICS LETTERS %K III-V arsenide; compounds; diodes; fields; gallium indium magnetic quantum resonant semiconductor semiconductors; tunnelling tunnelling; wells} {antimony; %N 15 %R 10.1063/1.3650715 %T Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T=180 K %V 99 %X A huge Rashba splitting enhanced by an in-plane magnetic field is observed in non-magnetic InGaAs resonant tunneling diodes with GaAsSb barriers. At T = 4 K, the current resonances split by the Rashba effect reveal peak to valley ratios up to 2.5:1 and the energy spacing between the split peaks reaches 30 meV at B = 5 T. The observed peak splitting can be observed at temperatures up to T = 180 K and higher. The Rashba parameters determined on four different samples are between alpha = 0.38 eV angstrom and alpha = 0.78 eV angstrom, which are consistent with theoretical values reported for InAs quantum wells under external electric fields. (C) 2011 American Institute of Physics. doi:10.1063/1.3650715

@article{WOS:000295883800043, abstract = {A huge Rashba splitting enhanced by an in-plane magnetic field is observed in non-magnetic InGaAs resonant tunneling diodes with GaAsSb barriers. At T = 4 K, the current resonances split by the Rashba effect reveal peak to valley ratios up to 2.5:1 and the energy spacing between the split peaks reaches 30 meV at B = 5 T. The observed peak splitting can be observed at temperatures up to T = 180 K and higher. The Rashba parameters determined on four different samples are between alpha = 0.38 eV angstrom and alpha = 0.78 eV angstrom, which are consistent with theoretical values reported for InAs quantum wells under external electric fields. (C) 2011 American Institute of Physics. [doi:10.1063/1.3650715]}, added-at = {2022-05-23T20:00:14.000+0200}, address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA}, author = {de Sousa, Silvano J and Detz, H and Klang, P and Gornik, E and Strasser, G and Smoliner, J}, biburl = {https://www.bibsonomy.org/bibtex/2b51621676fa6da8e4c456360f89d962b/ppgfis_ufc_br}, doi = {10.1063/1.3650715}, interhash = {2b1eb5a617c7a66d96af52806fa4d0e7}, intrahash = {b51621676fa6da8e4c456360f89d962b}, issn = {0003-6951}, journal = {APPLIED PHYSICS LETTERS}, keywords = {III-V arsenide; compounds; diodes; fields; gallium indium magnetic quantum resonant semiconductor semiconductors; tunnelling tunnelling; wells} {antimony;}, number = 15, publisher = {AMER INST PHYSICS}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T=180 K}, tppubtype = {article}, volume = 99, year = 2011 }