BaFe12-xTixO19 hexaferrites up to x = 2.00 were fabricated in an
ordinary ceramic way. Crystal structure parameters were isothermally
defined at 300 K from the powder XRD by the Rietveld technique. The cell
constants have nonmonotonic concentration dependence with a local
minimum of a similar to 5.886 angstrom and V similar to 698.75 angstrom(3) at x = 1.00. The occupation mechanism of the titanium
cations is confirmed. The Mossbauer investigation confirms such
localization of Ti4+. Magnetization vs field measurements were realized
at 300 K. The law of approach to saturation (LAS) was applied to
determine the magnetic loop characteristics. These values decrease
almost monotonically with an increase in titanium concentration and temperature. The minimum magnetic values were obtained for x = 2.00 at
300 K. Ac resistivity had a nonmonotonic growth dependence. Minimum ac resistivity was fixed for x = 0.50 at 300 K. As the frequency increases,
the ac resistivity decreases, as the value of the band gap. The real
part of permittivity epsilon' rises constantly with increasing
temperature and falls with frequency increase for all of the
compositions. Changes in the structure, magnetization, and ac
resistivity of BaFe12-xTixO19 were made on the basis of changing charged
states of iron ions and the occupation mechanism by titanium ions.
%0 Journal Article
%1 WOS:000645434400007
%A Vinnik, Denis A
%A Starikov, Andrey Yu
%A Zhivulin, Vladimir E
%A Astapovich, Kseniya A
%A Turchenko, Vitaliy A
%A I, Tat'yana Zubar
%A V, Sergei Trukhanov
%A Kohout, Jaroslav
%A Kmjec, Tomas
%A Yakovenko, Olena
%A Matzui, Lyudmila
%A Sombra, Antonio Sergio B
%A Zhou, Di
%A Jotania, Rajshree B
%A Singh, Charanjeet
%A Yang, Yujie
%A V, Alex Trukhanov
%C 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
%D 2021
%I AMER CHEMICAL SOC
%J ACS APPLIED ELECTRONIC MATERIALS
%K ac anisotropy; barium conductivity; crystal crystallographic hexaferrite; magnetic permittivity} structure; {doped
%N 4
%P 1583-1593
%R 10.1021/acsaelm.0c01081
%T Changes in the Structure, Magnetization, and Resistivity of
BaFe12-xTixO19
%V 3
%X BaFe12-xTixO19 hexaferrites up to x = 2.00 were fabricated in an
ordinary ceramic way. Crystal structure parameters were isothermally
defined at 300 K from the powder XRD by the Rietveld technique. The cell
constants have nonmonotonic concentration dependence with a local
minimum of a similar to 5.886 angstrom and V similar to 698.75 angstrom(3) at x = 1.00. The occupation mechanism of the titanium
cations is confirmed. The Mossbauer investigation confirms such
localization of Ti4+. Magnetization vs field measurements were realized
at 300 K. The law of approach to saturation (LAS) was applied to
determine the magnetic loop characteristics. These values decrease
almost monotonically with an increase in titanium concentration and temperature. The minimum magnetic values were obtained for x = 2.00 at
300 K. Ac resistivity had a nonmonotonic growth dependence. Minimum ac resistivity was fixed for x = 0.50 at 300 K. As the frequency increases,
the ac resistivity decreases, as the value of the band gap. The real
part of permittivity epsilon' rises constantly with increasing
temperature and falls with frequency increase for all of the
compositions. Changes in the structure, magnetization, and ac
resistivity of BaFe12-xTixO19 were made on the basis of changing charged
states of iron ions and the occupation mechanism by titanium ions.
@article{WOS:000645434400007,
abstract = {BaFe12-xTixO19 hexaferrites up to x = 2.00 were fabricated in an
ordinary ceramic way. Crystal structure parameters were isothermally
defined at 300 K from the powder XRD by the Rietveld technique. The cell
constants have nonmonotonic concentration dependence with a local
minimum of a similar to 5.886 angstrom and V similar to 698.75 angstrom(3) at x = 1.00. The occupation mechanism of the titanium
cations is confirmed. The Mossbauer investigation confirms such
localization of Ti4+. Magnetization vs field measurements were realized
at 300 K. The law of approach to saturation (LAS) was applied to
determine the magnetic loop characteristics. These values decrease
almost monotonically with an increase in titanium concentration and temperature. The minimum magnetic values were obtained for x = 2.00 at
300 K. Ac resistivity had a nonmonotonic growth dependence. Minimum ac resistivity was fixed for x = 0.50 at 300 K. As the frequency increases,
the ac resistivity decreases, as the value of the band gap. The real
part of permittivity epsilon' rises constantly with increasing
temperature and falls with frequency increase for all of the
compositions. Changes in the structure, magnetization, and ac
resistivity of BaFe12-xTixO19 were made on the basis of changing charged
states of iron ions and the occupation mechanism by titanium ions.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
author = {Vinnik, Denis A and Starikov, Andrey Yu and Zhivulin, Vladimir E and Astapovich, Kseniya A and Turchenko, Vitaliy A and I, Tat'yana Zubar and V, Sergei Trukhanov and Kohout, Jaroslav and Kmjec, Tomas and Yakovenko, Olena and Matzui, Lyudmila and Sombra, Antonio Sergio B and Zhou, Di and Jotania, Rajshree B and Singh, Charanjeet and Yang, Yujie and V, Alex Trukhanov},
biburl = {https://www.bibsonomy.org/bibtex/2d27518f40299966f97f7e85bfd6f3cfb/ppgfis_ufc_br},
doi = {10.1021/acsaelm.0c01081},
interhash = {87d666e63e938d7592741c1864ed3795},
intrahash = {d27518f40299966f97f7e85bfd6f3cfb},
journal = {ACS APPLIED ELECTRONIC MATERIALS},
keywords = {ac anisotropy; barium conductivity; crystal crystallographic hexaferrite; magnetic permittivity} structure; {doped},
number = 4,
pages = {1583-1593},
publisher = {AMER CHEMICAL SOC},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Changes in the Structure, Magnetization, and Resistivity of
BaFe12-xTixO19},
tppubtype = {article},
volume = 3,
year = 2021
}