%0 Journal Article %1 journals/iet-cds/AlouaniEEKN17 %A Alouani, Ihsen %A Elsharkasy, Wael M. %A Eltawil, Ahmed M. %A Kurdahi, Fadi J. %A Niar, Smaïl %D 2017 %J IET Circuits Devices Syst. %K dblp %N 1 %P 89-94 %T AS8-static random access memory (SRAM): asymmetric SRAM architecture for soft error hardening enhancement. %U http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds11.html#AlouaniEEKN17 %V 11

@article{journals/iet-cds/AlouaniEEKN17, added-at = {2022-12-07T00:00:00.000+0100}, author = {Alouani, Ihsen and Elsharkasy, Wael M. and Eltawil, Ahmed M. and Kurdahi, Fadi J. and Niar, Smaïl}, biburl = {https://www.bibsonomy.org/bibtex/2e02dc359d468043b5475df092873d385/dblp}, ee = {https://www.wikidata.org/entity/Q56568727}, interhash = {7c93694403f08c82e27fdf9fa5531626}, intrahash = {e02dc359d468043b5475df092873d385}, journal = {IET Circuits Devices Syst.}, keywords = {dblp}, number = 1, pages = {89-94}, timestamp = {2024-04-08T16:07:08.000+0200}, title = {AS8-static random access memory (SRAM): asymmetric SRAM architecture for soft error hardening enhancement.}, url = {http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds11.html#AlouaniEEKN17}, volume = 11, year = 2017 }