Пожалуйста, войдите в систему, чтобы принять участие в дискуссии (добавить собственные рецензию, или комментарий)
Цитировать эту публикацию
%0 Journal Article
%1 journals/ijcta/EbrahimiAAP15
%A Ebrahimi, Behzad
%A Asadpour, Reza
%A Afzali-Kusha, Ali
%A Pedram, Massoud
%D 2015
%J Int. J. Circuit Theory Appl.
%K dblp
%N 12
%P 2011-2024
%T A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages.
%U http://dblp.uni-trier.de/db/journals/ijcta/ijcta43.html#EbrahimiAAP15
%V 43
@article{journals/ijcta/EbrahimiAAP15,
added-at = {2023-03-21T00:00:00.000+0100},
author = {Ebrahimi, Behzad and Asadpour, Reza and Afzali-Kusha, Ali and Pedram, Massoud},
biburl = {https://www.bibsonomy.org/bibtex/2568aad7a868d8119392c80fd6654e620/dblp},
ee = {https://doi.org/10.1002/cta.2057},
interhash = {2fb443dee4abf61afe9f35eaed1e1ef7},
intrahash = {568aad7a868d8119392c80fd6654e620},
journal = {Int. J. Circuit Theory Appl.},
keywords = {dblp},
number = 12,
pages = {2011-2024},
timestamp = {2024-04-08T20:21:31.000+0200},
title = {A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages.},
url = {http://dblp.uni-trier.de/db/journals/ijcta/ijcta43.html#EbrahimiAAP15},
volume = 43,
year = 2015
}