%0 Conference Paper %1 conf/irps/TeraoHKSW22 %A Terao, Yutaka %A Hosoi, Takuji %A Kobayashi, Takuma %A Shimura, Takayoshi %A Watanabe, Heiji %B IRPS %D 2022 %I IEEE %K dblp %P 66-1 %T Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. %U http://dblp.uni-trier.de/db/conf/irps/irps2022.html#TeraoHKSW22 %@ 978-1-6654-7950-9

@inproceedings{conf/irps/TeraoHKSW22, added-at = {2023-09-30T00:00:00.000+0200}, author = {Terao, Yutaka and Hosoi, Takuji and Kobayashi, Takuma and Shimura, Takayoshi and Watanabe, Heiji}, biburl = {https://www.bibsonomy.org/bibtex/22e0f793a6a012929224ad4671c4eb148/dblp}, booktitle = {IRPS}, crossref = {conf/irps/2022}, ee = {https://doi.org/10.1109/IRPS48227.2022.9764433}, interhash = {55c0115b3a0f08502d04dc4aa394434b}, intrahash = {2e0f793a6a012929224ad4671c4eb148}, isbn = {978-1-6654-7950-9}, keywords = {dblp}, pages = {66-1}, publisher = {IEEE}, timestamp = {2024-04-09T12:18:58.000+0200}, title = {Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors.}, url = {http://dblp.uni-trier.de/db/conf/irps/irps2022.html#TeraoHKSW22}, year = 2022 }