%0 Conference Paper %1 conf/drc/AgarwalHB19 %A Agarwal, Aditi %A Han, Kijeong %A Baliga, B. Jayant %B DRC %D 2019 %I IEEE %K dblp %P 237-238 %T Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs. %U http://dblp.uni-trier.de/db/conf/drc/drc2019.html#AgarwalHB19 %@ 978-1-7281-2112-3

@inproceedings{conf/drc/AgarwalHB19, added-at = {2020-04-03T00:00:00.000+0200}, author = {Agarwal, Aditi and Han, Kijeong and Baliga, B. Jayant}, biburl = {https://www.bibsonomy.org/bibtex/275194463abd5e4ebd577a97a0c7a26d0/dblp}, booktitle = {DRC}, crossref = {conf/drc/2019}, ee = {https://doi.org/10.1109/DRC46940.2019.9046447}, interhash = {64a0fb88bc726422abc5eca2f1d2de4f}, intrahash = {75194463abd5e4ebd577a97a0c7a26d0}, isbn = {978-1-7281-2112-3}, keywords = {dblp}, pages = {237-238}, publisher = {IEEE}, timestamp = {2020-04-04T11:47:30.000+0200}, title = {Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs.}, url = {http://dblp.uni-trier.de/db/conf/drc/drc2019.html#AgarwalHB19}, year = 2019 }