%0 Journal Article %1 WOS:000074907100009 %A Narvaez, GA %A Araujo-Silva, MA %A Cerdeira, F %A Bean, JC %C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND %D 1998 %I PERGAMON-ELSEVIER SCIENCE LTD %J SOLID STATE COMMUNICATIONS %K inelastic light luminescence} optical properties; scattering; wells; {quantum %N 7 %P 359-362 %R 10.1016/S0038-1098(98)00222-1 %T On the cross-over between 2-dimensional and 3-dimensional growth in Si/Ge-n/Si quantum wells %V 107 %X We report Raman scattering and low temperature photoluminescence measurements performed on a series of Molecular-Beam-Epitaxy-grown Si/Ge-n/Si quantum wells with n varying from 3 to 6. Our results are consistent with a gradual evolution of the Si/Ge interface which starts with Ge segregation and formation of terraces for low Ge coverage, to smooth 2-dimensional Ge layers, bounded by interfacial alloy layers, for coverages superior to 4-monolayers. (C) 1998 Elsevier Science Ltd. All rights reserved.

@article{WOS:000074907100009, abstract = {We report Raman scattering and low temperature photoluminescence measurements performed on a series of Molecular-Beam-Epitaxy-grown Si/Ge-n/Si quantum wells with n varying from 3 to 6. Our results are consistent with a gradual evolution of the Si/Ge interface which starts with Ge segregation and formation of terraces for low Ge coverage, to smooth 2-dimensional Ge layers, bounded by interfacial alloy layers, for coverages superior to 4-monolayers. (C) 1998 Elsevier Science Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, author = {Narvaez, GA and Araujo-Silva, MA and Cerdeira, F and Bean, JC}, biburl = {https://www.bibsonomy.org/bibtex/295fa61f8c43ca5a114be4c4982d19127/ppgfis_ufc_br}, doi = {10.1016/S0038-1098(98)00222-1}, interhash = {69d06e978b1b3425ec897f9a553bf25a}, intrahash = {95fa61f8c43ca5a114be4c4982d19127}, issn = {0038-1098}, journal = {SOLID STATE COMMUNICATIONS}, keywords = {inelastic light luminescence} optical properties; scattering; wells; {quantum}, number = 7, pages = {359-362}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {On the cross-over between 2-dimensional and 3-dimensional growth in Si/Ge-n/Si quantum wells}, tppubtype = {article}, volume = 107, year = 1998 }