%0 Journal Article %1 pandey_simple_2000 %A Pandey, Santosh %A Kal, S. %D 2000 %J International Journal of Electronics %K MOS MOS, MOSFET, barrier, capacitor, density, device, diode, interface microfluidics myown schottky silicon transistor trap traps, %N 2 %P 153--161 %R 10.1080/002072100132291 %T A simple model for extraction of interface state density of a Schottky barrier diode using reverse bias C-V plots %U http://www.tandfonline.com/doi/abs/10.1080/002072100132291 %V 87 %X The reverse bias 1/C 2 vs. V plots of Schottky barrier diodes are studied here. The expressions for the slope and voltage intercept of Schottky diodes, as given in the literature, are approximated to obtain a general expression relating the diffusion potential, slope and voltage intercept of 1/C 2 vs. V plots. The expressions for the interface state density are derived. The simulated results are compared with those available in the literature. The validity of our model is established with reasonable accuracy. Based on the model, the characteristics of 1/C 2 vs. V plots are studied with variations in the interface oxide thickness and temperature.

@article{pandey_simple_2000, abstract = {The reverse bias 1/C 2 vs. V plots of Schottky barrier diodes are studied here. The expressions for the slope and voltage intercept of Schottky diodes, as given in the literature, are approximated to obtain a general expression relating the diffusion potential, slope and voltage intercept of 1/C 2 vs. V plots. The expressions for the interface state density are derived. The simulated results are compared with those available in the literature. The validity of our model is established with reasonable accuracy. Based on the model, the characteristics of 1/C 2 vs. V plots are studied with variations in the interface oxide thickness and temperature.}, added-at = {2022-07-12T23:24:56.000+0200}, author = {Pandey, Santosh and Kal, S.}, biburl = {https://www.bibsonomy.org/bibtex/286075338b9aabefeb517ea8f5218769e/spandey50}, doi = {10.1080/002072100132291}, interhash = {6a5e8df0251f6ac6b31b0e48bf8267c0}, intrahash = {86075338b9aabefeb517ea8f5218769e}, issn = {0020-7217, 1362-3060}, journal = {International Journal of Electronics}, keywords = {MOS MOS, MOSFET, barrier, capacitor, density, device, diode, interface microfluidics myown schottky silicon transistor trap traps,}, language = {en}, month = feb, number = 2, pages = {153--161}, timestamp = {2023-02-23T21:17:40.000+0100}, title = {A simple model for extraction of interface state density of a {Schottky} barrier diode using reverse bias {C}-{V} plots}, url = {http://www.tandfonline.com/doi/abs/10.1080/002072100132291}, urldate = {2022-05-23}, volume = 87, year = 2000 }