Abstract
The role of a shell-like interfacial layer on the ground state
recombination energy of confined electrons and holes in Si/SiO2 quantum
dots is addressed in this work. The depth of the interfacial confinement
potential and nanocrystal diameter were investigated and we found that
the dependence of the recombination energy on the quantum dot diameter
is weakened by the presence of the interface defect. (C) 2002 Elsevier
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