Device Physics of Germanium-Junctionless Tunnel Field Effect Transistor and an Approach to Optimize I on/I off by Drain Engineering and Work Function Engineering.
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%0 Journal Article
%1 journals/jolpe/GhoshBMA14
%A Ghosh, Bahniman
%A Bal, Punyasloka
%A Mondal, Partha
%A Akram, M. W.
%D 2014
%J J. Low Power Electron.
%K dblp
%N 1
%P 92-100
%T Device Physics of Germanium-Junctionless Tunnel Field Effect Transistor and an Approach to Optimize I on/I off by Drain Engineering and Work Function Engineering.
%U http://dblp.uni-trier.de/db/journals/jolpe/jolpe10.html#GhoshBMA14
%V 10
@article{journals/jolpe/GhoshBMA14,
added-at = {2020-05-22T00:00:00.000+0200},
author = {Ghosh, Bahniman and Bal, Punyasloka and Mondal, Partha and Akram, M. W.},
biburl = {https://www.bibsonomy.org/bibtex/2dc6d36a097cbf933d6ae048c121bc67b/dblp},
ee = {https://doi.org/10.1166/jolpe.2014.1300},
interhash = {6f7fbf23d1df84fc0114f2a24c1b0b8c},
intrahash = {dc6d36a097cbf933d6ae048c121bc67b},
journal = {J. Low Power Electron.},
keywords = {dblp},
number = 1,
pages = {92-100},
timestamp = {2020-05-23T12:25:59.000+0200},
title = {Device Physics of Germanium-Junctionless Tunnel Field Effect Transistor and an Approach to Optimize I on/I off by Drain Engineering and Work Function Engineering.},
url = {http://dblp.uni-trier.de/db/journals/jolpe/jolpe10.html#GhoshBMA14},
volume = 10,
year = 2014
}
