Abstract
This review discusses advances that have been made in the study of
defect-induced double-resonance processes in nanographite, graphene and
carbon nanotubes, mostly coming from combining Raman spectroscopic
experiments with microscopy studies and from the development of new
theoretical models. The disorder-induced peak frequencies and
intensities are discussed, with particular emphasis given to how the
disorder-induced features evolve with increasing amounts of disorder. We
address here two systems, ion-bombarded graphene and nanographite, where
disorder is represented by point defects and boundaries, respectively.
Raman spectroscopy is used to study the `atomic structure' of the
defect, making it possible, for example, to distinguish between zigzag
and armchair edges, based on selection rules of phonon scattering.
Finally, a different concept is discussed, involving the effect that
defects have on the lineshape of Raman-allowed peaks, owing to local
electron and phonon energy renormalization. Such effects can be observed
by near-field optical measurements on the G' feature for doped
single-walled carbon nanotubes.
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