%0 Journal Article %1 SenzakiEDL02 %A Senzaki, Junji %A Kojima, Kazutoshi %A Harada, Shinsuke %A Kosugi, Ryoji %A Suzuki, Seiji %A Suzuki, Takaya %A Fukuda, Kenji %D 2002 %I IEEE %J Electron Device Letters, IEEE %K 4H-SiC Hydrogen POA ap5 interface_traps %N 1 %P 13--15 %T Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11-20) face %V 23

@article{SenzakiEDL02, added-at = {2014-05-21T14:48:15.000+0200}, author = {Senzaki, Junji and Kojima, Kazutoshi and Harada, Shinsuke and Kosugi, Ryoji and Suzuki, Seiji and Suzuki, Takaya and Fukuda, Kenji}, biburl = {https://www.bibsonomy.org/bibtex/2a5808e22f69766d10ad43f4af356bcbd/gregor.pobegen}, interhash = {7c618ec00bfacb59dfff24ebb009b186}, intrahash = {a5808e22f69766d10ad43f4af356bcbd}, journal = {Electron Device Letters, IEEE}, keywords = {4H-SiC Hydrogen POA ap5 interface_traps}, number = 1, pages = {13--15}, publisher = {IEEE}, timestamp = {2014-05-21T14:48:15.000+0200}, title = {Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of {4H-SiC} MOSFET fabricated on (11-20) face}, volume = 23, year = 2002 }