%0 Journal Article %1 9217489 %A Costa, Julio César %A Kermani, Arash Pour Yazdan Panah %A Cantarella, Giuseppe %A Petti, Luisa %A Vogt, Christian %A Daus, Alwin %A Knobelspies, Stefan %A Tröster, Gerhard %A Münzenrieder, Niko S. %D 2020 %J IEEE Transactions on Electron Devices %K myown %N 11 %P 4934-4939 %R 10.1109/TED.2020.3026613 %T Long-Term Aging of Al2O3 Passivated and Unpassivated Flexible a-IGZO TFTs %U https://ieeexplore.ieee.org/document/9217489/ %V 67 %X Amongst the new materials studied for the fabrication of high-performance flexible thin-film transistors (TFTs), amorphous indium-gallium-zinc-oxide (a-IGZO) exhibits a combination of advantages that enables its application in commercial electronics. Hence, it is crucial to understand the electrical stability of a-IGZO TFTs over long periods of time. In this work, we present the effects of long-term aging on Al2O3 passivated and unpassivated flexible a-IGZO TFTs over a period of 80 months (≈ 6.5 years). It is found that although remaining functional, these devices are influenced by different instability effects. More specifically, positive gate bias stress experiments indicate that the Al2O3 passivation layer contributes to the degradation of the devices' performance. These results show that the Al2O3 passivation, although beneficial to the initial device stability, does not prevent the degradation of the passivated devices in comparison with their unpassivated counterparts after long periods of storage.

@article{9217489, abstract = {Amongst the new materials studied for the fabrication of high-performance flexible thin-film transistors (TFTs), amorphous indium-gallium-zinc-oxide (a-IGZO) exhibits a combination of advantages that enables its application in commercial electronics. Hence, it is crucial to understand the electrical stability of a-IGZO TFTs over long periods of time. In this work, we present the effects of long-term aging on Al2O3 passivated and unpassivated flexible a-IGZO TFTs over a period of 80 months (≈ 6.5 years). It is found that although remaining functional, these devices are influenced by different instability effects. More specifically, positive gate bias stress experiments indicate that the Al2O3 passivation layer contributes to the degradation of the devices' performance. These results show that the Al2O3 passivation, although beneficial to the initial device stability, does not prevent the degradation of the passivated devices in comparison with their unpassivated counterparts after long periods of storage.}, added-at = {2023-05-22T12:21:28.000+0200}, author = {Costa, Julio César and Kermani, Arash Pour Yazdan Panah and Cantarella, Giuseppe and Petti, Luisa and Vogt, Christian and Daus, Alwin and Knobelspies, Stefan and Tröster, Gerhard and Münzenrieder, Niko S.}, biburl = {https://www.bibsonomy.org/bibtex/24fd7115fafff740469114e97febbf964/nikomu}, doi = {10.1109/TED.2020.3026613}, interhash = {7e3e1c5faf881617a5750e133cff45fb}, intrahash = {4fd7115fafff740469114e97febbf964}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = nov, number = 11, pages = {4934-4939}, timestamp = {2023-05-22T12:21:28.000+0200}, title = {Long-Term Aging of Al2O3 Passivated and Unpassivated Flexible a-IGZO TFTs}, url = {https://ieeexplore.ieee.org/document/9217489/}, volume = 67, year = 2020 }