%0 Journal Article %1 WOS:000182700700201 %A Ferreira, EC %A Albuquerque, EL %A da Costa, JAP %A Mauriz, PW %A Freire, VN %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2003 %I ELSEVIER SCIENCE BV %J PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES %K GaAs/AlxGa1-xAs; gain} graded interfaces; laser lasers; well {quantum %N 1-4 %P 600-601 %R 10.1016/S1386-9477(02)00881-0 %T Optical gain in non-abrupt GaAs/AlxGa1-x quantum well lasers %V 17 %X The optical gain of unstrained non-abrupt GaAs/AlxGa1-xAs single quantum wells as a function of the energy of the radiation, width of the well, and interface thickness is calculated. Both the transversal electrical and the transversal magnetic light polarization are considered. All sub-bands transitions in the quantum well are taken into account. It is shown that the existence of non-abrupt interfaces decreases the gain and shifts its spectra to higher frequencies. (C) 2002 Elsevier Science B.V. All rights reserved.

@article{WOS:000182700700201, abstract = {The optical gain of unstrained non-abrupt GaAs/AlxGa1-xAs single quantum wells as a function of the energy of the radiation, width of the well, and interface thickness is calculated. Both the transversal electrical and the transversal magnetic light polarization are considered. All sub-bands transitions in the quantum well are taken into account. It is shown that the existence of non-abrupt interfaces decreases the gain and shifts its spectra to higher frequencies. (C) 2002 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {Ferreira, EC and Albuquerque, EL and da Costa, JAP and Mauriz, PW and Freire, VN}, biburl = {https://www.bibsonomy.org/bibtex/20bc930c4e89e0748ff92e12dac4ca0e9/ppgfis_ufc_br}, doi = {10.1016/S1386-9477(02)00881-0}, interhash = {8cddb00b5f4aeaf99f2c81d346953941}, intrahash = {0bc930c4e89e0748ff92e12dac4ca0e9}, issn = {1386-9477}, journal = {PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES}, keywords = {GaAs/AlxGa1-xAs; gain} graded interfaces; laser lasers; well {quantum}, note = {International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), TOULOUSE, FRANCE, JUL 22-26, 2002}, number = {1-4}, pages = {600-601}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Optical gain in non-abrupt GaAs/AlxGa1-x quantum well lasers}, tppubtype = {article}, volume = 17, year = 2003 }