Abstract
This paper is devoted to the temperature dependence of the resistivity in Si-
MOS samples over the wide range of densities in the ``metallic phase'' (n>n_c)
but not too close to the critical density n_c. Three domains of different
behavior in \rho(T) are identified. These are: i quantum domain of
`low-temperatures', where a logarithmic T-dependence of (with
$d\rho/dT<0$) dominates; ii semi-classical domain of `high-temperatures', in
which Drude resistivity strongly varies with T (with d\rho/dT>0); and ii
crossover between the former two, where a linear T-dependence dominates (with
d\rho/dT>0). In the crossover regime and at higher densities
(n>20x10^11/cm^2), \rho(T) goes through a minimum at temperature T_min.
Both the absolute value of T_min and its dependence on density are found to
be in an agreement with the conventional weak-localization theory. For n
smaller than 20x10^11/cm^2, the theoretical estimate for T_min falls
outside the experimentally accessible temperature range. This explains the
absence of the minimum at these densities in the data. In total, over the two
decades in the temperature (domains ii and iii), the two semiclassical
effects mimic the metallic like transport properties. Our analysis shows that
the behaviour of \rho(T) in the region of << h/e^2 can be described
phenomenologically in terms of the conventional weak-localization theory.
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