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%0 Journal Article
%1 journals/tvlsi/YangPSWYJ15
%A Yang, Younghwi
%A Park, Juhyun
%A Song, Seung Chul
%A Wang, Joseph
%A Yeap, Geoffrey
%A Jung, Seong-Ook
%D 2015
%J IEEE Trans. Very Large Scale Integr. Syst.
%K dblp
%N 11
%P 2748-2752
%T Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology.
%U http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi23.html#YangPSWYJ15
%V 23
@article{journals/tvlsi/YangPSWYJ15,
added-at = {2020-03-11T00:00:00.000+0100},
author = {Yang, Younghwi and Park, Juhyun and Song, Seung Chul and Wang, Joseph and Yeap, Geoffrey and Jung, Seong-Ook},
biburl = {https://www.bibsonomy.org/bibtex/22fbd1fcd3c2d1043a01faefe1c35cc3a/dblp},
ee = {https://doi.org/10.1109/TVLSI.2014.2367234},
interhash = {93773895c25ac7269a3c1c616324e675},
intrahash = {2fbd1fcd3c2d1043a01faefe1c35cc3a},
journal = {IEEE Trans. Very Large Scale Integr. Syst.},
keywords = {dblp},
number = 11,
pages = {2748-2752},
timestamp = {2020-03-12T11:44:19.000+0100},
title = {Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology.},
url = {http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi23.html#YangPSWYJ15},
volume = 23,
year = 2015
}