%0 Journal Article %1 8411327 %A Petti, Luisa %A Greco, Emanuel %A Cantarella, Giuseppe %A Münzenrieder, Niko %A Vogt, Christian %A Tröster, Gerhard %D 2018 %J IEEE Transactions on Electron Devices %K myown %N 9 %P 3796-3802 %R 10.1109/TED.2018.2851926 %T Flexible In–Ga–Zn–O Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser Writing %U https://ieeexplore.ieee.org/document/8411327/ %V 65 %X In this paper, the low-temperature (≤150 °C) fabrication and characterization of flexible indium-gallium-zinc-oxide (IGZO) top-gate thin-film transistors (TFTs) with channel lengths down to 280 nm is presented. Such extremely short channel lengths in flexible IGZO TFTs were realized with a novel manufacturing process combining two-photon direct laser writing (DLW) photolithography with Ti/Au/Ti source/drain e-beam evaporation and liftoff. The resulting flexible IGZO TFTs exhibit a saturation field-effect mobility of 1.1 cm2 · V-1 · s-1 and a threshold voltage of 3 V. Thanks to the short channel lengths (280 nm) and the small gate to source/drain overlap (5.2 μm), the TFTs yield a transit frequency of 80 MHz (at 8.5-V gate-source voltage) extracted from the measured S-parameters. Furthermore, the devices are fully functional when wrapped around a cylindrical rod with 6-mm radius, corresponding to 0.4% tensile strain in the TFT channel. These results demonstrate a new methodology to realize entirely flexible nanostructures and prove its suitability for the fabrication of short-channel transistors on polymer substrates for future wearable communication electronics.

@article{8411327, abstract = {In this paper, the low-temperature (≤150 °C) fabrication and characterization of flexible indium-gallium-zinc-oxide (IGZO) top-gate thin-film transistors (TFTs) with channel lengths down to 280 nm is presented. Such extremely short channel lengths in flexible IGZO TFTs were realized with a novel manufacturing process combining two-photon direct laser writing (DLW) photolithography with Ti/Au/Ti source/drain e-beam evaporation and liftoff. The resulting flexible IGZO TFTs exhibit a saturation field-effect mobility of 1.1 cm2 · V-1 · s-1 and a threshold voltage of 3 V. Thanks to the short channel lengths (280 nm) and the small gate to source/drain overlap (5.2 μm), the TFTs yield a transit frequency of 80 MHz (at 8.5-V gate-source voltage) extracted from the measured S-parameters. Furthermore, the devices are fully functional when wrapped around a cylindrical rod with 6-mm radius, corresponding to 0.4% tensile strain in the TFT channel. These results demonstrate a new methodology to realize entirely flexible nanostructures and prove its suitability for the fabrication of short-channel transistors on polymer substrates for future wearable communication electronics.}, added-at = {2023-05-22T12:07:33.000+0200}, author = {Petti, Luisa and Greco, Emanuel and Cantarella, Giuseppe and Münzenrieder, Niko and Vogt, Christian and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/258c575cdc4e65c734d489dfd9efb7366/nikomu}, doi = {10.1109/TED.2018.2851926}, interhash = {a55dd8a33b1702cffc731467ec851cdb}, intrahash = {58c575cdc4e65c734d489dfd9efb7366}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = {Sep.}, number = 9, pages = {3796-3802}, timestamp = {2023-05-22T12:07:33.000+0200}, title = {Flexible In–Ga–Zn–O Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser Writing}, url = {https://ieeexplore.ieee.org/document/8411327/}, volume = 65, year = 2018 }