%0 Journal Article %1 Park20116863 %A Park, Ji Hun %A Jang, Samseok %A Byun, Dongjin %A Lee, Joong Kee %D 2011 %J Thin Solid Films %K aempl %N 20 %P 6863 - 6867 %R http://dx.doi.org/10.1016/j.tsf.2011.04.048 %T Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition %U http://www.sciencedirect.com/science/article/pii/S0040609011008649 %V 519 %X The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV–visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10− 4 Ω cm.

@article{Park20116863, abstract = {The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV–visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10− 4 Ω cm. }, added-at = {2015-10-08T06:08:57.000+0200}, author = {Park, Ji Hun and Jang, Samseok and Byun, Dongjin and Lee, Joong Kee}, biburl = {https://www.bibsonomy.org/bibtex/2384134d2b17d69768e577f5ef755af4d/l1th1um}, description = {Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition}, doi = {http://dx.doi.org/10.1016/j.tsf.2011.04.048}, interhash = {a96804f39589b32c5d74a6cc825b1a6d}, intrahash = {384134d2b17d69768e577f5ef755af4d}, issn = {0040-6090}, journal = {Thin Solid Films }, keywords = {aempl}, note = {10th Asia-Pacific Conference on Plasma Science and Technology }, number = 20, pages = {6863 - 6867}, timestamp = {2015-10-08T06:08:57.000+0200}, title = {Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition }, url = {http://www.sciencedirect.com/science/article/pii/S0040609011008649}, volume = 519, year = 2011 }