%0 Journal Article %1 WOS:000258520700043 %A Rodriguez, E %A Kellermann, G %A Craievich, A F %A Jimenez, E %A Cesar, C L %A Barbosa, L C %C 24-28 OVAL RD, LONDON NW1 7DX, ENGLAND %D 2008 %I ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD %J SUPERLATTICES AND MICROSTRUCTURES %K Deposition; GISAXS; Laser PECVD; Pulsed X-ray devices; dots; optical quantum reflectometry} semiconductor switching {all %N 5-6 %P 626-634 %R 10.1016/j.spmi.2007.07.017 %T All-optical switching device for infrared based on PbTe quantum dots %V 43 %X Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy (HRTEM), Grazing-Incidence Small-Angle X-ray scattering (GISAXS) and X-ray Reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. Finally multilayers were fabricated inside a Fabry-Perot cavity. The device was characterized by means of Scanning Electron Microscopy (SEM). Transmittance measurements show the device functionality in the infrared region. (C) 2007 Elsevier Ltd. All rights reserved.

@article{WOS:000258520700043, abstract = {Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy (HRTEM), Grazing-Incidence Small-Angle X-ray scattering (GISAXS) and X-ray Reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. Finally multilayers were fabricated inside a Fabry-Perot cavity. The device was characterized by means of Scanning Electron Microscopy (SEM). Transmittance measurements show the device functionality in the infrared region. (C) 2007 Elsevier Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {24-28 OVAL RD, LONDON NW1 7DX, ENGLAND}, author = {Rodriguez, E and Kellermann, G and Craievich, A F and Jimenez, E and Cesar, C L and Barbosa, L C}, biburl = {https://www.bibsonomy.org/bibtex/21076451aa46ba0bb41f7c6998d76d20e/ppgfis_ufc_br}, doi = {10.1016/j.spmi.2007.07.017}, interhash = {b1b45c43c463abdde923c30376d0ecf9}, intrahash = {1076451aa46ba0bb41f7c6998d76d20e}, issn = {0749-6036}, journal = {SUPERLATTICES AND MICROSTRUCTURES}, keywords = {Deposition; GISAXS; Laser PECVD; Pulsed X-ray devices; dots; optical quantum reflectometry} semiconductor switching {all}, note = {7th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN7), Havana, CUBA, APR 12-17, 2007}, number = {5-6}, pages = {626-634}, publisher = {ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {All-optical switching device for infrared based on PbTe quantum dots}, tppubtype = {article}, volume = 43, year = 2008 }