Article,
ON PROGNOZISYS OF MANUFACTURING DOUBLEBASE HETEROTRANSISTOR AND OPTIMIZATION OF TECHNOLOGICAL PROCESS
International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE), 3 (1/2): 1-13 (May 2015)
Abstract
In this paper we introduce a modification of recently introduced analytical approach to model mass- and heat transport. The approach gives us possibility to model the transport in multilayer structures with account nonlinearity of the process and time-varing coefficients and without matching the solutions at the interfaces of the multilayer structures. As an example of using of the approach we consider technological process to manufacture more compact double base heterobipolar transistor. The technological approach based on manufacturing a heterostructure with required configuration, doping of required areas of this heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.The approach gives us possibility to manufacture p-n junctions with higher sharpness framework the transistor.In this situation we have a possibility to obtain smaller switching time of p-n-junctions and higher compactness of the considered bipolar transistor.
Tags
- analytical
- approach
- double-base
- heterotransistors
- increasing
- integration
- model
- of
- processes
- rate
- technological
- to
- transistors
