%0 Journal Article %1 Lusakowski2005 %A Lusakowski, J. %A Knap, W. %A Dyakonova, N. %A Varani, L. %A Mateos, J. %A Gonzalez, T. %A Roelens, Y. %A Bollaert, S. %A Cappy, A. %A Karpierz, K. %D 2005 %J J. Appl. Phys. %K %N 6 %P 064307 %R 10.1063/1.1861140 %T Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor %V 97 %X Terahertz emission from InGaAs/InAlAs lattice-matched high electron mobility transistors was observed. The emission appears in a threshold-like manner when the applied drain-to-source voltage U(DS) is larger than a threshold value U(TH). The spectrum of the emitted signal consists of two maxima. The spectral position of the lower-frequency maximum (around 1 THz) is sensitive to U(DS) and U(GS), while that of the higher frequency one (around 5 THz) is not. The lower-frequency maximum is interpreted as resulting from the Dyakonov-Shur instability of the gated two-dimensional electron fluid, while the higher frequency is supposed to result from current-driven plasma instability in the ungated part of the channel. The experimental results are confirmed by and discussed within Monte Carlo calculations of the high-frequency current noise spectra. (C) 2005 American Institute of Physics.

@article{Lusakowski2005, abstract = {Terahertz emission from InGaAs/InAlAs lattice-matched high electron mobility transistors was observed. The emission appears in a threshold-like manner when the applied drain-to-source voltage U(DS) is larger than a threshold value U(TH). The spectrum of the emitted signal consists of two maxima. The spectral position of the lower-frequency maximum (around 1 THz) is sensitive to U(DS) and U(GS), while that of the higher frequency one (around 5 THz) is not. The lower-frequency maximum is interpreted as resulting from the Dyakonov-Shur instability of the gated two-dimensional electron fluid, while the higher frequency is supposed to result from current-driven plasma instability in the ungated part of the channel. The experimental results are confirmed by and discussed within Monte Carlo calculations of the high-frequency current noise spectra. (C) 2005 American Institute of Physics.}, added-at = {2011-10-24T23:16:33.000+0200}, author = {Lusakowski, J. and Knap, W. and Dyakonova, N. and Varani, L. and Mateos, J. and Gonzalez, T. and Roelens, Y. and Bollaert, S. and Cappy, A. and Karpierz, K.}, biburl = {https://www.bibsonomy.org/bibtex/223c332008a8b4984ea68492dc88f1c66/jabreftest}, doi = {10.1063/1.1861140}, file = {:X\:\\THz_Polish\\2005_Lusakowski.pdf:PDF}, groups = {public}, interhash = {bfae31aad0ecc90a7c3e60281e005da0}, intrahash = {23c332008a8b4984ea68492dc88f1c66}, journal = {J. Appl. Phys.}, keywords = {}, month = {#mar#}, number = 6, pages = 064307, sn = {0021-8979}, tc = {63}, timestamp = {2011-10-24T23:16:33.000+0200}, title = {Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor}, username = {jabreftest}, ut = {WOS:000227767700074}, volume = 97, year = 2005, z9 = {62} }