%0 Journal Article %1 Schmitt2024 %A Schmitt, Cedric %A Erhardt, Jonas %A Eck, Philipp %A Schmitt, Matthias %A Lee, Kyungchan %A Keßler, Philipp %A Wagner, Tim %A Spring, Merit %A Liu, Bing %A Enzner, Stefan %A Kamp, Martin %A Jovic, Vedran %A Jozwiak, Chris %A Bostwick, Aaron %A Rotenberg, Eli %A Kim, Timur %A Cacho, Cephise %A Lee, Tien-Lin %A Sangiovanni, Giorgio %A Moser, Simon %A Claessen, Ralph %D 2024 %J Nat. Commun %K a %N 1 %P 1486 %R 10.1038/s41467-024-45816-9 %T Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation %U https://doi.org/10.1038/s41467-024-45816-9 %V 15 %X Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit --- ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap ofþinspace˜þinspace120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.

@article{Schmitt2024, abstract = {Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit --- ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap of{\thinspace}{\textasciitilde}{\thinspace}120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.}, added-at = {2024-03-01T16:25:53.000+0100}, author = {Schmitt, Cedric and Erhardt, Jonas and Eck, Philipp and Schmitt, Matthias and Lee, Kyungchan and Keßler, Philipp and Wagner, Tim and Spring, Merit and Liu, Bing and Enzner, Stefan and Kamp, Martin and Jovic, Vedran and Jozwiak, Chris and Bostwick, Aaron and Rotenberg, Eli and Kim, Timur and Cacho, Cephise and Lee, Tien-Lin and Sangiovanni, Giorgio and Moser, Simon and Claessen, Ralph}, biburl = {https://www.bibsonomy.org/bibtex/222490f0e979179205f91f06bbdf32bcb/ctqmat}, day = 19, description = {Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation | Nature Communications}, doi = {10.1038/s41467-024-45816-9}, interhash = {c1fb4334d50619ca074360e24f791d26}, intrahash = {22490f0e979179205f91f06bbdf32bcb}, issn = {2041-1723}, journal = {Nat. Commun}, keywords = {a}, month = {02}, number = 1, pages = 1486, timestamp = {2024-03-01T16:29:11.000+0100}, title = {Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation}, url = {https://doi.org/10.1038/s41467-024-45816-9}, volume = 15, year = 2024 }